Synchronous buck converter using shielded gate field effect transistors

• US 8,193,570 B2
• Filed: 07/29/2010
• Issued: 06/05/2012
• Est. Priority Date: 01/05/2006
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Inventors: Sapp, Steven, Challa, Ashok, Kocon, Christopher B.
• Primary Examiner(s): Le, Thao
• Assistant Examiner(s): Gordon, Matthew
• Application Number:
  US12/845,999
• Publication Number:
  US 20110163732A1
• Time in Patent Office: 677 Days
• Field of Search: 257/301, 257/E27.091, 438/243
• US Class Current: 257/301
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A synchronous buck converter includes a high-side switch and a low-side switch serially coupled to one another. The low-side switch includes a field effect transistor that comprises: a trench extending into a drift region of the field effect transistor; a shield electrode in a lower portion of the trench, wherein the shield electrode is insulated from the drift region by a shield dielectric; a gate electrode in the trench over the shield electrode, wherein the gate electrode is insulated from the shield electrode by an inter-electrode dielectric; source regions adjacent the trench; a source metal contacting the source regions; and a resistive element having one end contacting the shield electrode and another end contacting the source metal in the field effect transistor.

Claims

1. A synchronous buck converter comprising:

a high-side switch and a low-side switch serially coupled to one another, wherein the low-side switch includes a field effect transistor which comprises;

a trench extending into a drift region of the field effect transistor;

a shield electrode in a lower portion of the trench, wherein the shield electrode is insulated from the drift region by a shield dielectric;

a gate electrode in the trench over the shield electrode, wherein the gate electrode is insulated from the shield electrode by an inter-electrode dielectric;

source regions adjacent the trench;

a source metal contacting the source regions; and

a resistive element having one end contacting the shield electrode and another end contacting the source metal in the field effect transistor.

2. The synchronous buck converter of claim 1 further comprising a controller block connected to gates of the high-side and low-side switches.

3. The synchronous buck converter of claim 2 wherein the controller block includes a first driver connected to a gate of the high-side switch, and a second driver connected to a gate of the low-side switch.

4. The synchronous buck converter of claim 2 wherein the high-side switch is connected between a first supply voltage and an inductor, and the low-side switch is connected between the inductor and a second supply voltage.

5. The synchronous buck converter of claim 1 wherein the resistive element induces a potential in the shield electrode during a switching event.

6. The synchronous buck converter of claim 1 further comprising an independent shield metal line which contacts the resistive element and the shield electrode.

7. The synchronous buck converter of claim 1 wherein the resistive element is coupled to the shield electrode by a shield contact and to the source metal by a source contact.

8. The synchronous buck converter of claim 1 wherein the resistive element comprises a poly-silicon layer.

9. The synchronous buck converter of claim 1 wherein the resistive element is a single resistor.

10. The synchronous buck converter of claim 1 wherein the resistive element comprises at least two resistors connected in parallel.

11. The synchronous buck converter of claim 1 wherein the resistive element is coupled to a protective diode shunt.

12. The synchronous buck converter of claim 1 wherein the resistive element is connected in parallel to a Zener diode.

13. The synchronous buck converter of claim 1 wherein the resistive element is less than 30 ohms.

14. The synchronous buck converter of claim 1 wherein the resistive element has a serpentine shape.

15. A synchronous buck converter comprising:

a high-side switch and a low-side switch serially coupled to one another, wherein the low-side switch includes a field effect transistor which comprises;

a plurality of trenches extending into a drift region;

a shield electrode in a lower portion of each trench, wherein the shield electrode is insulated from the drift region by a shield dielectric;

a gate electrode in each trench over the shield electrode, wherein the gate electrode is insulated from the shield electrode by an inter-electrode dielectric;

source regions adjacent the trenches;

a source metal contacting the source regions; and

a resistive element having one end contacting the shield electrode and another end contacting the source metal.

16. The synchronous buck converter of claim 15 further comprising a controller block connected to gates of the high-side and low-side switches.

17. The synchronous buck converter of claim 16 wherein the controller block includes a first driver connected to a gate of the high-side switch, and a second driver connected to a gate of the low-side switch.

18. The synchronous buck converter of claim 16 wherein the high-side switch is connected between a first supply voltage and an inductor, and the low-side switch is connected between the inductor and a second supply voltage.

19. The synchronous buck converter of claim 15 further comprising an independent shield metal line which contacts the resistive element and the shield electrode.

20. The synchronous buck converter of claim 15 wherein the resistive element comprises a poly-silicon layer.