Thin film detector for presence detection

• US 8,193,685 B2
• Filed: 06/30/2008
• Issued: 06/05/2012
• Est. Priority Date: 07/03/2007
• Status: Expired due to Fees

• Current Assignee: Philips Lighting BV (Koninklijke Philips N.V.)
• Original Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: Klee, Mareike, Dekker, Ronald, De Wild, Marco, Mauczok, Ruediger, Van Heesch, Chris, Pasveer, Willem Franke, Knibbe, Engel Johannes, Reimann, Klaus, Delnoij, Roger Peter Anna, Renders, Christina Adriana, Wunnicke, Olaf, Reefman, Derk, Dirksen, Peter, Van Esch, Harry, Breen, Remco Alphonsus Hendrikus, Sreedharan Nair, Biju Kumar, Boots, Henri Marie Joseph
• Primary Examiner(s): Budd, Mark
• Application Number:
  US12/666,831
• Publication Number:
  US 20100277040A1
• Time in Patent Office: 1,436 Days
• Field of Search: 310/324, 310330-332
• US Class Current: 310/344
• CPC Class Codes: B06B 1/0292 Electrostatic transducers, e.g. electret-type
• CPC Class Codes: B06B 1/0603 using a piezoelectric bender, e.g. bimorph
• CPC Class Codes: G08B 13/1645 using ultrasonic detection means and other detection means, e.g. microwave or infrared radiation
• CPC Class Codes: H10N 30/02 Forming enclosures or casings
• CPC Class Codes: H10N 30/2047 Membrane type
• CPC Class Codes: H10N 30/88 Mounts; Supports; Enclosures; Casings
• CPC Class Codes: H10N 39/00 Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
• CPC Class Codes: Y10T 29/42 Piezoelectric device making

Abstract

A transducer (800) is provided where a membrane (830) is formed over a front substrate (615); and a piezoelectric layer (820) is formed over the membrane (830) at an active portion (821) and peripheral portions located adjacent the active portion (821). A patterned conductive layer including first and second electrodes (840, 845) is formed over the piezoelectric layer (820). Further, a back substrate structure is provided having supports (822, 824) located at the peripheral portions adjacent the active portion (821). The height (826) of the supports (822, 824) is greater than a combined height (828) of the patterned piezoelectric layer and the patterned conductive layer. Many transducers may be connected to form an array, where a controller may be provided for controlling the array, such as steering a beam of the array, and processing signals received by the array, for presence or motion detection and/or imaging, for example.

Claims

1. A transducer comprising:

a membrane configured to change shape in response to a force;

piezoelectric layer disposed over the membrane;

first and second electrodes in contact with the piezoelectric layer, wherein an electric field between the first and second electrodes is proportional to mechanical movement of the piezoelectric layer;

first and second supports located at peripheral sides of the piezoelectric layer, the first and second supports each comprising a first support layer and a second support layer, the first and second supports including piezoelectric material of the piezoelectric layer and conductive material of the first and second electrodes; and

a substrate supported by said first and second supports.

2. The transducer of claim 1, wherein a support height of the first and second supports is greater than first a combined height of the piezoelectric layer and the first electrode when the first and second electrodes are formed on one side of the piezoelectric layer, and wherein the support height is greater than a second combined height of the piezoelectric layer and the first and second electrodes when the first and second electrodes are formed on opposite sides of the piezoelectric layer.

3. The transducer of claim 1, wherein the membrane comprises a silicon oxide layer located over a silicon nitride layer, the piezoelectric layer being located over the silicon oxide layer.

4. The transducer of claim 1, further comprising a barrier layer, wherein the membrane comprises a silicon oxide layer formed over a silicon nitride layer;

the barrier layer being located over the silicon oxide layer and the piezoelectric layer being located over the barrier layer.

5. The transducer of claim 1 wherein the piezoelectric layer comprises a thin film of lead titanate zirconate.

6. The transducer of claim 1 wherein the piezoelectric layer comprises a thin film of doped lead titanate zirconate.

7. The transducer of claim 1 wherein the piezoelectric layer is continuous.

8. The transducer of claim 1 wherein the piezoelectric layer is patterned.