Substrate distortion measurement

• US 8,194,242 B2
• Filed: 07/29/2005
• Issued: 06/05/2012
• Est. Priority Date: 07/29/2005
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Derksen, Antonius Theodorus Anna Maria, De Jager, Pieter Willem Herman, Smeets, Erik Marie Jose
• Primary Examiner(s): Toatley, Gregory J
• Assistant Examiner(s): BRYANT, REBECCA CAROLE
• Application Number:
  US11/192,400
• Publication Number:
  US 20070026325A1
• Time in Patent Office: 2,503 Days
• Field of Search: 356/237.5, 356/124, 355/52
• US Class Current: 356/237.5
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/70508 Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
• CPC Class Codes: G03F 7/70783 Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
• CPC Class Codes: G03F 7/70791 Large workpieces, e.g. glass substrates for flat panel displays or solar panels

Abstract

A distortion measurement apparatus comprising a detector arranged to measure distortion of a substrate, and a processor arranged to receive distortion data indicating the measured distortion of the substrate and to transform the distortion data into a frequency domain representation. The distortion data may alternatively be transformed into an orthogonal polynomial or an orthonormal polynomial representation.

Claims

1. A distortion measurement apparatus comprising:

a patterning device arranged to provide a patterned beam of radiation;

a projection system arranged to receive the patterned beam of radiation from the patterning device and to project the beam of radiation onto the substrate;

a detector arranged to measure physical distortion of a shape of a substrate;

a first processor programmed to receive distortion data indicating the measured physical distortion of the shape of the substrate and to transform the distortion data into a frequency domain representation; and

a second processor programmed to receive data representative of a pattern to be provided on the patterning device, and to use the frequency domain distortion data to adjust the pattern to be provided on the patterning device.

2. The apparatus according to claim 1, wherein the first processor and the second processor are separate entities.

3. The apparatus according to claim 1, wherein the first processor and the second processor are both part of a same entity.

4. The apparatus according to claim 1, wherein the transform to the frequency domain is a Fourier transform.

5. The apparatus according to claim 1, wherein the transform to the frequency domain is a wavelet transform.

15. The apparatus according to claim 1, wherein, the detector is arranged to measure the physical distortion of the shape of the substrate by measuring deviation of an alignment mark on the substrate from a preferred position.

6. A distortion measurement apparatus comprising:

a patterning device arranged to provide a patterned beam of radiation;

a projection system arranged to receive the patterned beam of radiation from the patterning device and to project the beam of radiation onto the substrate;

a detector arranged to measure physical distortion of a shape of a substrate;

a first processor programmed to receive distortion data indicating the measured physical distortion of the shape of the substrate and to transform the distortion data into an orthogonal polynomial representation; and

a second processor programmed to receive data representative of a pattern to be provided on the patterning device, and to use the orthogonal polynomial distortion data to adjust the pattern to be provided on the patterning device.

7. The apparatus according to claim 6, wherein the first processor and the second processor are separate entities.

8. The apparatus according to claim 6, wherein the first processor and the second processor are both part of a same entity.

9. A distortion measurement apparatus comprising:

a patterning device arranged to provide a patterned beam of radiation;

a projection system arranged to receive the patterned beam of radiation from the patterning device and to project the beam of radiation onto the substrate;

a detector arranged to measure physical distortion of a shape of a substrate; and

a first processor programmed to receive distortion data indicating the measured physical distortion of the shape of the substrate and to transform the distortion data into an orthonormal polynomial representation; and

a second processor programmed to receive data representative of a pattern to be provided on the patterning device, and to use the orthonormal polynomial distortion data to adjust the pattern to be provided on the patterning device, to correct for the measured physical distortion of the shape of the substrate.

10. The apparatus according to claim 9, wherein the first processor and the second processor are separate entities.

11. The apparatus according to claim 9, wherein the first processor and the second processor are both part of a same entity.

12. A method of measuring lithographic substrate physical distortion, the method comprising:

measuring the physical distortion of a substrate with a detector;

transforming the measured distortion data into a frequency domain representation; and

receiving data representative of a pattern to be provided on a patterning device, using the frequency domain distortion data to adjust the pattern data to correct for the measured physical distortion of the shape of the substrate, then sending the adjusted pattern data to the patterning device, and using the patterning device to pattern a beam of radiation which is projected onto the substrate.

16. The method according to claim 12, wherein, the detector is arranged to measure the physical distortion of the shape of the substrate by measuring deviation of an alignment mark on the substrate from a preferred position.

13. A method of measuring lithographic substrate physical distortion, the method comprising:

measuring the physical distortion of a shape of a substrate with a detector;

transforming the measured distortion data into an orthogonal polynomial representation; and

receiving data representative of a pattern to be provided on the patterning device, using the orthogonal polynomial distortion data to adjust the pattern data to correct for the measured physical distortion of the shape of the substrate, then sending the adjusted pattern data to a patterning device, and using the patterning device to pattern a beam of radiation which is projected onto the substrate.

17. The method according to claim 13, wherein the physical distortion of a shape of a substrate is measured by measuring a deviation of an alignment mark on the substrate from a preferred position.

14. A method of measuring lithographic substrate physical distortion, the method comprising:

measuring physical distortion of a shape of a substrate with a detector;

transforming measured distortion data into an orthonormal polynomial representation; and

receiving data representative of a pattern to be provided on the patterning device, using the orthonormal polynomial distortion data to adjust the pattern data to correct for the measured physical distortion of the shape of the substrate, then sending adjusted pattern data to the patterning device, and using the patterning device to pattern a beam of radiation which is projected onto the substrate.

18. The method according to claim 14, wherein the physical distortion of a shape of a substrate is measured by measuring a deviation of an alignment mark on the substrate from a preferred position.