Optical sensor element, imaging device, electronic equipment and memory element
First Claim
1. An optical sensor element having a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, whereinthe amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage, whereina reset operation is performed before the light reception of the semiconductor layer to restore the drain current relative to the gate voltage to the initial state before the light reception of the semiconductor layer.
2 Assignments
0 Petitions
Accused Products
Abstract
An optical sensor element has a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, wherein the amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage.
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Citations
12 Claims
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1. An optical sensor element having a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, wherein
the amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage, wherein a reset operation is performed before the light reception of the semiconductor layer to restore the drain current relative to the gate voltage to the initial state before the light reception of the semiconductor layer.
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5. An imaging device having an optical sensor element, the optical sensor element having a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, wherein
the amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage, wherein a reset operation is performed before the light reception of the semiconductor layer to restore the drain current relative to the gate voltage to the initial state before the light reception of the semiconductor layer.
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9. Electronic equipment having an optical sensor element, the optical sensor element having a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, wherein
the amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage, wherein a reset operation is performed before the light reception of the semiconductor layer to restore the drain current relative to the gate voltage to the initial state before the light reception of the semiconductor layer.
Specification