Cointegrated MEMS sensor and method

• US 8,196,475 B2
• Filed: 03/16/2009
• Issued: 06/12/2012
• Est. Priority Date: 03/16/2009
• Status: Active Grant

• Current Assignee: Kavlico Corporation (Sensata Technologies Holding Plc)
• Original Assignee: Kavlico Corporation (Sensata Technologies Holding Plc)
• Inventors: Seesink, Peter, Obermeier, Horst, Abed, Omar, Rodriguez, Dan, Hunter, Robert, Miclaus, Calin
• Primary Examiner(s): Caputo, Lisa
• Assistant Examiner(s): Jenkins, Jermaine
• Application Number:
  US12/404,792
• Publication Number:
  US 20100229651A1
• Time in Patent Office: 1,184 Days
• Field of Search: None
• US Class Current: 73/715
• CPC Class Codes: B81B 2207/015 the micromechanical device and the control or processing electronics being integrated on the same substrate
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate

Abstract

Described herein is a method for integrating MEMS with submicron semiconductor electrical circuits such as CMOS to provide more complex signal processing, on-chip calibration and integration with RF technologies. A MEMS sensor is provided having an upper layer, an insulating layer into which a cavity has been formed and a handle layer. The upper layer acts as both the substrate of the semiconductor electrical circuit and as the active MEMS element. The remainder of the circuitry is fabricated either in or on the upper layer. In a preferred method of the present invention a first wafer assembly and a second wafer assembly are fabricated such that a MEMS sensor and the substrate of at least one semiconductive electrical circuit is formed.

Claims

1. A MEMS sensor comprising:

a semiconductor electrical circuit,

a first layer utilized as a substrate for the semiconductor electrical circuit and as an active element of the MEMS sensor,

a base layer,

a first insulating layer disposed between the first layer and the base layer, and

a cavity that has been formed in the insulating layer;

wherein the cavity does not extend beyond the insulating layer in which the cavity is formed and the semiconductor electrical circuit is formed on the first layer, and wherein the cavity is formed by removing material from the insulating layer.

2. The MEMS sensor of claim 1 further comprising implant areas within the first layer.

3. The MEMS sensor of claim 1 wherein the cavity is sealed or open to the environment.

4. The MEMS sensor of claim 1 further comprising a second insulating layer on the first layer.

5. The MEMS sensor of claim 1 wherein the first insulating layer is a thin layer of oxide.

6. The MEMS sensor of claim 1, wherein the cavity is sealed within the MEMS sensor.

7. The MEMS sensor of claim 1 wherein the cavity that has been formed in the insulating layer extends through the insulating layer but does not extend beyond the insulating layer.

8. A method for fabricating a MEMS sensor, comprising the steps of:

forming an insulating layer on top of a handle wafer layer;

bonding a thin semiconductive layer to the insulating layer;

creating at least one depression in the insulating layer such that the depression does not extend beyond the insulating layer in which it is formed, wherein creating the depressions includes removing material from the insulating layer;

forming implant areas in the thin semiconductive layer; and

forming gates between the implant areas on the semiconductive layer to assemble semiconductor electrical circuits on the MEMS sensor.

9. The method of claim 8, wherein the thin semiconductive layer is part of a silicon-on-insulator (SOI) wafer, and the method further comprising the step of removing a silicon base layer and an insulating layer of the SOI wafer after the thin semiconductive layer has been bonded to the insulating layer and before the implant areas are formed.

10. The method of claim 8, wherein the thin semiconductive layer is part of a silicon insulator (SI) wafer which has been thinned down, and the method further comprising the step of removing an insulating layer of the SI wafer after the thin semiconductive layer has been bonded to the insulating layer and before the implant areas are formed.

11. The method of claim 8, wherein the thin semiconductive layer is part of a silicon-on-insulator (SOI) wafer and the method further comprising the step of removing the silicon base layer of the SOI wafer after the thin semiconductive layer has been bonded to the insulating layer and before the implant areas are formed and wherein the gate is formed on top of the insulating layer of the SOI wafer.

12. The method of claim 8, further comprising:

sealing the depression within the MEMS sensor.

13. The method of claim 8 wherein the depression extends through the insulating layer but does not extend beyond the insulating layer.

14. A method for fabricating a MEMS sensor, comprising the steps of:

forming an insulating layer on top of a handle wafer layer;

bonding a silicon top layer of a silicon-on-insulator (SOI) wafer to the insulating layer;

creating at least one cavity in the insulating layer such that the cavity does not extend beyond the insulating layer in which it is formed, wherein creating the cavity includes removing material from the insulating layer;

forming implant areas in the silicon top layer; and

forming electrical connections between the implant areas in the silicon top layer.

15. The method of claim 14, further comprising the step of removing the silicon base layer of the SOI wafer after the thin semiconductive layer has been bonded to the insulating layer and before the implant areas are formed in the silicon top layer.

16. The method of claim 14, further comprising:

sealing the depression within the MEMS sensor.

17. The method of claim 14 wherein the cavity extends through the insulating layer but does not extend beyond the insulating layer.

18. A method of sensing an environmental variable on a MEMS device comprising:

integrating a semiconductor electrical circuit onto the MEMS device,

forming a cavity in the MEMS device to create an active element of the MEMS device such that the cavity does not extend beyond the layer in which it is formed, wherein forming the cavity includes removing material from the layer in which the cavity is formed,

responding to a change in the environmental variable through movements of the active element, and

measuring a change in current with the semiconductor electrical circuit, wherein the change in current is caused by the movements of the active element.

19. The method of claim 18, wherein the active element acts as a diaphragm.

20. The method of claim 18, wherein the cavity is sealed within the MEMS device.