Plasma processing apparatus

• US 8,197,634 B2
• Filed: 08/31/2007
• Issued: 06/12/2012
• Est. Priority Date: 05/22/2007
• Status: Expired due to Fees

• Current Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: Yokogawa, Kenetsu, Usui, Tatehito
• Primary Examiner(s): Kackar, Ram N.
• Application Number:
  US11/848,262
• Publication Number:
  US 20080289765A1
• Time in Patent Office: 1,747 Days
• Field of Search: 156/345.25, 156/345.24
• US Class Current: 156/345.24
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32972 Spectral analysis

Abstract

An arrangement is provided for suppressing interference phenomenon on the surface of a sample that deteriorates the detection accuracy upon detecting the time variation of plasma conditions such as plasma space distribution or the processing status of the sample. For example, light scattering element for diffusing and transmitting incident light and a convex lens are arranged on a front stage of an optical fiber light receiving unit connected to a photodetector disposed on an opposite side from the sample for observing the emission of plasma. This serves to prevent the changes in light quantity accompanying the interference effect caused by the changes in thin film thickness on the surface of the sample from reaching the photodetector. An arrangement is also provided to prevent the light scattering element from being directly exposed to the plasma to prevent alteration of the light scattering element.

Claims

1. A plasma processing apparatus for turning a gas supplied to a vacuum reactor into plasma and etching a surface of a sample to be processed placed in the vacuum reactor by the plasma, the apparatus comprising:

a vacuum reactor;

a vacuum evacuation means for evacuating the interior of the vacuum reactor;

a sample stage means disposed in the vacuum reactor for placing a sample to be processed;

a material gas introducing means for introducing material gas into the vacuum reactor;

a plasma generating means for turning the gas introduced via the material gas introducing means into plasma; and

a plasma emission detecting means disposed at a plane opposing to the sample to be processed, wherein the plasma emission detecting means further comprises;

an emission extraction means for extracting the emission from plasma;

a light transmission means located outside of the vacuum reactor for scattering and transmitting incident light into the emission extraction means; and

a vacuum partition window configured to prevent the light transmission means from being directly exposed to the plasma,

wherein the light transmission means of the plasma emission detecting means is comprised of a light scattering means having an uneven surface of Ra 5 μ

m or greater and Ra 200 μ

m or smaller, for scattering and transmitting incident light of 0.2 μ

m or greater in wavelength;

wherein the uneven surface of the light scattering means is obtained by applying an abrasive to the surface of the light scattering means.

2. The plasma processing apparatus according to claim 1, wherein

the plasma emission detecting means has arranged either directly or via an optical fiber on a rear stage of the light transmission means a converting means for converting light into an electric signal.

3. The plasma processing apparatus according to claim 1, wherein

the emission extraction means has arranged a convex lens adjacent to the light transmission means.

4. The plasma processing apparatus according to claim 1, wherein

the plasma emission detecting means comprises a converting means for converting light from the sample to be processed into an electric signal, the converting means disposed either directly or via an optical fiber on a rear stage of the light transmission means;

and

a convex lens is disposed adjacent to the light transmission means, wherein the convex lens is arranged so that a solid angle between the convex lens and the converting means or a light receiving end plane of the optical fiber arranged at a rear stage of the light transmission means is equal to or greater than three times a solid angle between the light scattering means for scattering and transmitting incident light or the light scattering means and the converting means or the light receiving end plane of the optical fiber.

5. The plasma processing apparatus according to claim 1, wherein

the plasma emission detecting means comprises the light transmission means comprised of either a light scattering means for scattering and transmitting incident light or the light scattering means, and an optical transmission member disposed between the light transmission means and the sample to be processed.

6. The plasma processing apparatus according to claim 1, wherein

the plasma emission detecting means comprises a plurality of emission extraction means for extracting the emission from plasma and a plurality of converting means for converting the emission of plasma obtained by the emission extraction means to electric signals;

and

the emission obtained by the plurality of emission extraction means is respectively introduced to the converting means and converted to electric signals, and plasma emission intensity distribution is measured based on the electric signals so as to evaluate a space distribution status of plasma on the processing surface.

7. The plasma processing apparatus according to claim 1, wherein

the plasma emission detecting means comprises an emission extraction means for extracting the emission from plasma, a spectroscope, and a progress status measuring means for measuring the status of progress of the etching process on the surface of the sample to be processed by measuring distribution of plasma emission, wherein the emission obtained via the emission extraction means is introduced to the spectroscope and subjected to plasma emission spectroscopic measurement so as to measure the etching status of the surface of the sample to be processed.

8. The plasma processing apparatus according to claim 7, wherein

the progress status measuring means detects an end point of processing status based on the change in plasma emission species caused by the reaction between the surface of the sample to be processed and plasma.

9. The plasma processing apparatus according to claim 1, wherein

the plasma emission detecting means comprises a plurality of emission extraction means for extracting the emission from plasma, a plurality of spectroscopes and a plurality of converting means for converting the emission of plasma obtained by the emission extraction means to electric signals, and a progress status measuring means for measuring the status of progress of the etching process on the surface of the sample to be processed, wherein the emission obtained via the plurality of emission extraction means is introduced to the converting means and converted into electric signals, and the plasma emission intensity distribution is measured based on the electric signals, according to which the time variation of spatial distribution of plasma is measured, and a plasma generating parameter is controlled in response to the variation.

10. The plasma processing apparatus according to claim 9, wherein

the plasma generating parameter controlled in response to the time variation of spatial distribution of plasma obtained via the plurality of emission extraction means is selected from a group consisting of a high frequency power for generating plasma, a magnetic field condition for generating plasma, a gas pressure or a high frequency power applied to the sample to be processed.

11. The plasma processing apparatus according to claim 1, wherein the vacuum partition window is comprised of optically flat quartz.

12. A plasma processing apparatus for turning a gas supplied to a vacuum reactor into plasma and etching a surface of a sample to be processed placed in the vacuum reactor by the plasma, the apparatus comprising:

a vacuum reactor;

an vacuum evacuation means for evacuating the interior of the vacuum reactor;

a sample stage means disposed in the vacuum reactor for placing a sample to be processed;

a material gas introducing means for introducing material gas into the vacuum reactor;

a plasma generating means for turning the gas introduced via the material gas introducing means into plasma; and

a plasma emission detecting means disposed at a plane opposing to the sample to be processed, wherein the plasma emission detecting means further comprises;

an emission extraction means for extracting the emission from plasma;

a light transmission means located outside of the vacuum reactor for scattering and transmitting incident light into the emission extraction means; and

means for preventing the light transmission means from being altered by the plasma by preventing the light transmission means from being directly exposed to the plasma,

wherein the light transmission means of the plasma emission detecting means is comprised of a light scattering means having an uneven surface of Ra 5 μ

m or greater and Ra 200 μ

m or smaller, for scattering and transmitting incident light of 0.2 μ

m or greater in wavelength;

wherein the uneven surface of the light scattering means is obtained by applying an abrasive to the surface of the light scattering means.

13. The plasma processing apparatus according to claim 12, wherein

the plasma emission detecting means has arranged either directly or via an optical fiber on a rear stage of the light transmission means a converting means for converting light into an electric signal.

14. The plasma processing apparatus according to claim 12, wherein

the emission extraction means has arranged a convex lens adjacent to the light transmission means.

15. The plasma processing apparatus according to claim 12, wherein

the plasma emission detecting means comprises a converting means for converting light from the sample to be processed into an electric signal, the converting means disposed either directly or via an optical fiber on a rear stage of the light transmission means;

a convex lens is disposed adjacent to the light transmission means, wherein the convex lens is arranged so that a solid angle between the convex lens and the converting means or a light receiving end plane of the optical fiber arranged at a rear stage of the light transmission means is equal to or greater than three times a solid angle between the light scattering means for scattering and transmitting incident light or the light scattering means and the converting means or the light receiving end plane of the optical fiber.

16. The plasma processing apparatus according to claim 12, wherein

the plasma emission detecting means comprises the light transmission means comprised of either a light scattering means for scattering and transmitting incident light or the light scattering means, and an optical transmission member disposed between the light transmission means and the sample to be processed.

17. The plasma processing apparatus according to claim 12, wherein

the plasma emission detecting means comprises a plurality of emission extraction means for extracting the emission from plasma and a plurality of converting means for converting the emission of plasma obtained by the emission extraction means to electric signals;

and

the emission obtained by the plurality of emission extraction means is respectively introduced to the converting means and converted to electric signals, and plasma emission intensity distribution is measured based on the electric signals so as to evaluate a space distribution status of plasma on the processing surface.

18. The plasma processing apparatus according to claim 12, wherein

the plasma emission detecting means comprises an emission extraction means for extracting the emission from plasma, a spectroscope, and a progress status measuring means for measuring the status of progress of the etching process on the surface of the sample to be processed by measuring distribution of plasma emission, wherein the emission obtained via the emission extraction means is introduced to the spectroscope and subjected to plasma emission spectroscopic measurement so as to measure the etching status of the surface of the sample to be processed.

19. The plasma processing apparatus according to claim 18, wherein

the progress status measuring means detects an end point of processing status based on the change in plasma emission species caused by the reaction between the surface of the sample to be processed and plasma.

20. The plasma processing apparatus according to claim 12, wherein

the plasma emission detecting means comprises a plurality of emission extraction means for extracting the emission from plasma, a plurality of spectroscopes and a plurality of converting means for converting the emission of plasma obtained by the emission extraction means to electric signals, and a progress status measuring means for measuring the status of progress of the etching process on the surface of the sample to be processed, wherein the emission obtained via the plurality of emission extraction means is introduced to the converting means and converted into electric signals, and the plasma emission intensity distribution is measured based on the electric signals, according to which the time variation of spatial distribution of plasma is measured, and a plasma generating parameter is controlled in response to the variation.

21. The plasma processing apparatus according to claim 20, wherein

the plasma generating parameter controlled in response to the time variation of spatial distribution of plasma obtained via the plurality of emission extraction means is selected from a group consisting of a high frequency power for generating plasma, a magnetic field condition for generating plasma, a gas pressure or a high frequency power applied to the sample to be processed.