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Plasma processing apparatus

  • US 8,197,634 B2
  • Filed: 08/31/2007
  • Issued: 06/12/2012
  • Est. Priority Date: 05/22/2007
  • Status: Expired due to Fees
First Claim
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1. A plasma processing apparatus for turning a gas supplied to a vacuum reactor into plasma and etching a surface of a sample to be processed placed in the vacuum reactor by the plasma, the apparatus comprising:

  • a vacuum reactor;

    a vacuum evacuation means for evacuating the interior of the vacuum reactor;

    a sample stage means disposed in the vacuum reactor for placing a sample to be processed;

    a material gas introducing means for introducing material gas into the vacuum reactor;

    a plasma generating means for turning the gas introduced via the material gas introducing means into plasma; and

    a plasma emission detecting means disposed at a plane opposing to the sample to be processed, wherein the plasma emission detecting means further comprises;

    an emission extraction means for extracting the emission from plasma;

    a light transmission means located outside of the vacuum reactor for scattering and transmitting incident light into the emission extraction means; and

    a vacuum partition window configured to prevent the light transmission means from being directly exposed to the plasma,wherein the light transmission means of the plasma emission detecting means is comprised of a light scattering means having an uneven surface of Ra 5 μ

    m or greater and Ra 200 μ

    m or smaller, for scattering and transmitting incident light of 0.2 μ

    m or greater in wavelength;

    wherein the uneven surface of the light scattering means is obtained by applying an abrasive to the surface of the light scattering means.

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