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Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method

  • US 8,198,122 B2
  • Filed: 07/26/2011
  • Issued: 06/12/2012
  • Est. Priority Date: 09/29/2008
  • Status: Expired due to Fees
First Claim
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1. A method for forming a thin film photovoltaic device comprising:

  • providing a substrate comprising a surface region;

    forming a first electrode layer overlying the surface region;

    forming a copper layer overlying the first electrode layer;

    forming an indium layer overlying the copper layer to form a multi-layered structure;

    subjecting at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species;

    forming a bulk copper indium disulfide material from the multi-layered structure, wherein the bulk copper indium disulfide material comprises a surface region characterized by a copper poor surface;

    subjecting the copper poor surface and one or more portions of the bulk copper indium disulfide material to chloride species;

    converting the copper poor surface from an n-type characteristic to a p-type characteristic;

    converting any of the one or more portions of the bulk copper indium disulfide material from a n-type characteristic to an p-type characteristic;

    forming a window layer overlying the bulk copper indium disulfide material.

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