Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method
First Claim
1. A method for forming a thin film photovoltaic device comprising:
- providing a substrate comprising a surface region;
forming a first electrode layer overlying the surface region;
forming a copper layer overlying the first electrode layer;
forming an indium layer overlying the copper layer to form a multi-layered structure;
subjecting at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species;
forming a bulk copper indium disulfide material from the multi-layered structure, wherein the bulk copper indium disulfide material comprises a surface region characterized by a copper poor surface;
subjecting the copper poor surface and one or more portions of the bulk copper indium disulfide material to chloride species;
converting the copper poor surface from an n-type characteristic to a p-type characteristic;
converting any of the one or more portions of the bulk copper indium disulfide material from a n-type characteristic to an p-type characteristic;
forming a window layer overlying the bulk copper indium disulfide material.
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Accused Products
Abstract
A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. The method subjects at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to form a bulk copper indium disulfide material. The bulk copper indium disulfide material comprises one or more portions of copper indium disulfide material and a copper poor surface region characterized by a copper-to-indium atomic ratio of less than about 0.95:1. The method subjects the copper poor surface and one or more portions of the bulk copper indium disulfide material to a chlorine species to convert the copper poor surface from an n-type characteristic to a p-type characteristic and to convert any of the one or more portions of the bulk copper indium disulfide material having the copper-to-indium atomic ratio of less than about 0.95:1 from a n-type characteristic to an p-type characteristic. A window layer is formed overlying the copper indium disulfide material.
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Citations
19 Claims
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1. A method for forming a thin film photovoltaic device comprising:
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providing a substrate comprising a surface region; forming a first electrode layer overlying the surface region; forming a copper layer overlying the first electrode layer; forming an indium layer overlying the copper layer to form a multi-layered structure; subjecting at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species; forming a bulk copper indium disulfide material from the multi-layered structure, wherein the bulk copper indium disulfide material comprises a surface region characterized by a copper poor surface; subjecting the copper poor surface and one or more portions of the bulk copper indium disulfide material to chloride species; converting the copper poor surface from an n-type characteristic to a p-type characteristic; converting any of the one or more portions of the bulk copper indium disulfide material from a n-type characteristic to an p-type characteristic; forming a window layer overlying the bulk copper indium disulfide material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for forming a thin film photovoltaic device, the method comprising:
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providing a transparent substrate comprising a surface region; forming a first electrode layer overlying the surface region; forming a copper indium material by at least sputtering a target comprising an indium copper material; subjecting the copper indium material to thermal treatment process in an environment containing a sulfur bearing species; forming a copper-poor indium disulfide material from at least the thermal treatment process of the copper poor indium material; compensating the copper-poor copper indium disulfide material using a chloride species, wherein the copper poor copper indium disulfide material has an n-type characteristic; changing the copper-poor copper indium disulfide material to have a p-type characteristic; and forming a window layer overlying the copper indium disulfide material. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A method for forming a thin film photovoltaic device, the method comprising:
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providing a substrate comprising a surface region; forming a first electrode layer overlying the surface region; forming a chalcopyrite material overlying the electrode layer, the chalcopyrite material comprising a copper-poor copper indium disulfide region; compensating the copper-poor copper indium disulfide region using a chloride species to change its characteristic from an n-type to a p-type; forming a window layer overlying the chalcopyrite material; and forming a second electrode layer overlying the window layer.
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Specification