Semiconductor light emitting device and method for manufacturing the same
First Claim
1. A semiconductor light emitting device, comprising:
- a substrate;
a semiconductor stack which includes an active layer emitting light and is provided on the substrate; and
a ZnO electrode provided below a p-GaN semiconductor layer at a bottom of the semiconductor stack,wherein a single or a plurality of protrusions are formed in an upper surface of an n-GaN semiconductor layer at a top of the semiconductor stack which emits light to the outside,an average WA of widths of bottom surfaces of the protrusions satisfies WA>
=λ
/n, where λ
is wavelength of light emitted from the active layer and n is a refractive index of the n-GaN semiconductor layer at the top of the semiconductor stack, andan upper surface of each of the single or the plurality of protrusions is conical shaped.
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Accused Products
Abstract
To provide a semiconductor light emitting device with a light extraction efficiency increased and a method for manufacturing the semiconductor light emitting device.
A semiconductor light emitting device 1 includes a supporting substrate 2 and a semiconductor stack 6 including an MQW active layer 13 emitting light and an n-GaN layer 14 at the top. In the upper surface of the n-GaN layer 14 of the semiconductor attack 6, a plurality of conical protrusions 14a are formed. The protrusions 14a are formed so that an average WA of widths W of bottom surfaces of protrusions 14 satisfies: WA>=λ/n, where λ is wavelength of light emitted from the active layer and n is a refractive index of the n-GaN layer 14.
59 Citations
6 Claims
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1. A semiconductor light emitting device, comprising:
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a substrate; a semiconductor stack which includes an active layer emitting light and is provided on the substrate; and a ZnO electrode provided below a p-GaN semiconductor layer at a bottom of the semiconductor stack, wherein a single or a plurality of protrusions are formed in an upper surface of an n-GaN semiconductor layer at a top of the semiconductor stack which emits light to the outside, an average WA of widths of bottom surfaces of the protrusions satisfies WA>
=λ
/n, where λ
is wavelength of light emitted from the active layer and n is a refractive index of the n-GaN semiconductor layer at the top of the semiconductor stack, andan upper surface of each of the single or the plurality of protrusions is conical shaped. - View Dependent Claims (2, 3)
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4. A semiconductor light emitting device, comprising:
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a substrate; a semiconductor stack which includes an active layer emitting light and is provided on the substrate; an n-GaN semiconductor layer at a top of the semiconductor stack which emits light to the outside; and a ZnO electrode provided below a p-GaN semiconductor layer at the bottom of the semiconductor stack, wherein a single or a plurality of protrusions are formed in an upper surface of the n-GaN semiconductor layer at the top of the semiconductor stack, and an average WA of widths of bottom surfaces of the protrusions satisfies WA>
=λ
/n, where λ
is wavelength of light emitted from the active layer and n is a refractive index of the n-GaN semiconductor layer at the top of the semiconductor stack. - View Dependent Claims (5, 6)
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Specification
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- Resources
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Current AssigneeROHM Co., Ltd.
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Original AssigneeROHM Co., Ltd.
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InventorsSakai, Mitsuhiko
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Primary Examiner(s)Richards, N Drew
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Assistant Examiner(s)SINGAL, ANKUSH K
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Application NumberUS12/086,177Publication NumberTime in Patent Office2,014 DaysField of Search257/98US Class Current257/98CPC Class CodesH01L 33/22 Roughened surfaces, e.g. at...H01L 33/32 containing nitrogen
