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Semiconductor device with improved on-resistance

  • US 8,198,678 B2
  • Filed: 12/09/2009
  • Issued: 06/12/2012
  • Est. Priority Date: 12/09/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a source;

    a drain;

    a gate configured to selectively enable a current to pass between the source and the drain;

    a drift zone between the source and the drain;

    a doped semiconductor substrate between the drift zone and the drain;

    a first field plate adjacent the drift zone, the first field plate vertically aligned with the gate such that the first field plate and the gate are arranged in a straight line perpendicular to the drain;

    a dielectric layer electrically isolating the first field plate from the drift zone, the dielectric layer extending into the doped semiconductor substrate; and

    charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone.

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