Semiconductor device with improved on-resistance
First Claim
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1. A semiconductor device comprising:
- a source;
a drain;
a gate configured to selectively enable a current to pass between the source and the drain;
a drift zone between the source and the drain;
a doped semiconductor substrate between the drift zone and the drain;
a first field plate adjacent the drift zone, the first field plate vertically aligned with the gate such that the first field plate and the gate are arranged in a straight line perpendicular to the drain;
a dielectric layer electrically isolating the first field plate from the drift zone, the dielectric layer extending into the doped semiconductor substrate; and
charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone.
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Abstract
A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone.
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Citations
26 Claims
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1. A semiconductor device comprising:
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a source; a drain; a gate configured to selectively enable a current to pass between the source and the drain; a drift zone between the source and the drain; a doped semiconductor substrate between the drift zone and the drain; a first field plate adjacent the drift zone, the first field plate vertically aligned with the gate such that the first field plate and the gate are arranged in a straight line perpendicular to the drain; a dielectric layer electrically isolating the first field plate from the drift zone, the dielectric layer extending into the doped semiconductor substrate; and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a source; a drain; a gate configured to selectively enable a current to pass between the source and the drain; a drift zone between the source and the drain; a field stop region between the drift zone and the drain; a first field plate adjacent the drift zone, the first field plate vertically aligned with the gate; a dielectric layer electrically isolating the first field plate from the drift zone, the dielectric layer extending through the field stop region; and positive charges within the dielectric layer, wherein the first field plate extends through the field stop region. - View Dependent Claims (8, 9, 10)
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11. A semiconductor device comprising:
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a source region; a drain; a gate configured to selectively enable a current to pass between the source region and the drain; a drift zone between the source region and the drain; a body region between the drift zone and the source region; a first dielectric layer electrically isolating the gate from the body region; a field plate adjacent the drift zone, the field plate tapered such that the field plate is wider near the gate and narrower near the drain; a second dielectric layer electrically isolating the first field plate from the drift zone, the second dielectric layer gradually increasing in thickness such that the dielectric layer is thinner near the gate and thicker near the drain; and charges within the second dielectric layer close to an interface of the dielectric layer adjacent the drift zone. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a source region; a drain; a gate configured to selectively enable a current to pass between the source region and the drain; a drift zone between the source region and the drain; a body region between the drift zone and the source region; a first dielectric layer electrically isolating the gate from the body region; a field plate adjacent the drift zone; a second dielectric layer electrically isolating the first field plate from the drift zone; and charges within the second dielectric layer close to an interface of the dielectric layer adjacent the drift zone, wherein the charges are not within the first dielectric layer. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26)
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Specification