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Zener diode with reduced substrate current

  • US 8,198,703 B2
  • Filed: 01/18/2010
  • Issued: 06/12/2012
  • Est. Priority Date: 01/18/2010
  • Status: Expired due to Fees
First Claim
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1. A Zener diode comprising:

  • a substrate including semiconductor material having a first conductivity type;

    an isolation tub located in the semiconductor material, the isolation tub having a second conductivity type, and the isolation tub generally defining a first interior volume;

    a sidewall located within the first interior volume, the sidewall having the first conductivity type, and the sidewall generally defining a second interior volume;

    a first region having the first conductivity type, formed in the semiconductor material, the first region located within the second interior volume;

    a second region having the second conductivity type, formed in the semiconductor material and overlying the first region, the second region located within the second interior volume, wherein the second conductivity type is opposite the first conductivity type; and

    an electrode formed in the second region, wherein the electrode is electrically coupled to the first region.

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