Hermetically sealed semiconductor device module

• US 8,198,712 B2
• Filed: 06/07/2007
• Issued: 06/12/2012
• Est. Priority Date: 06/07/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Zhuang, Weidong, Hu, Weiping
• Primary Examiner(s): Matthews, Colleen A
• Assistant Examiner(s): YUSHINA, GALINA G
• Application Number:
  US11/759,656
• Publication Number:
  US 20080029875A1
• Time in Patent Office: 1,832 Days
• Field of Search: 257/692, 257/714, 257/678, 257/700, 257/704, 257/684, 257/728, 257/723, 257/732, 257/620, 257/E33.058, 257/E23.104, 361/705, 361/709, 174/521, 174/542, 363/144, 363/147
• US Class Current: 257/678
• CPC Class Codes: H01L 23/04 characterised by the shape of the container or parts, e.g. caps, walls
• CPC Class Codes: H01L 23/049 the other leads being perpendicular to the base
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

A sealed semiconductor power module that may include a rectifier, such as a silicon controlled rectifier (SCR), is provided. The module includes an AlN substrate having a bottom surface positioned on a metallic base plate and a top surface that includes a first pad and a second pad, the substrate including a copper body on both of the two major surfaces. The module also includes a first die and a second die positioned on top of the first and second pads, respectively, the first die and the second die each including a main contact area on a top surface thereof, the first die including an isolated gate area on the top surface to which is coupled a gate terminal; and first and second power terminals in direct wirebondless electrical connection via molybdenum tabs with the main contact areas of the die.

Claims

1. A sealed semiconductor power module comprising:

a metallic base plate having a metallic plating;

a substrate comprised of aluminum and nitrogen, and having two major surfaces, a bottom surface of the two major surfaces positioned on the base plate and a top surface of the two major surfaces including a first pad and a second pad, the substrate including a directly bonded copper bonding bonded to both of the two major surfaces;

a first die positioned on top of the first pad and a second die positioned on top of the second pad, the first die and the second die each including a main contact area formed integral to each die on a top surface of each die, the first die including a gate area on the top surface of the first die, the gate area being isolated from direct electrical contact with the main contact area of the first die;

a first power terminal in wirebondless electrical connection to the main contact area of the first die via a first molybdenum tab disposed between the main contact area of the first die and the first power terminal, and

a second power terminal in wirebondless electrical connection to the main contact area of the second die via a second molybdenum tab disposed between the main contact area of the second die and the second power terminal;

a third power terminal in wirebondless electrical connection to the substrate via a third molybdenum tab disposed between the third power terminal and the substrate;

a gate terminal in electrical contact with the gate area; and

a cover that includes a frame physically attached to and surrounding the base plate and a lid physically attached to the frame and including apertures above the first die and the second die, the cover configured to seal the first die and the second die,

wherein the first power terminal, the second power terminal, the third power terminal, and the gate terminal extend from an interior space of the cover to the exterior of the cover whereby a contact portion of the first power terminal, a contact portion of the second power terminal, a contact portion of the third power terminal, and a contact portion of the gate terminal traverse the apertures of the lid and are exposed over a top surface of a top of the lid; and

wherein the cover comprises a first metal insert, and the first power terminal is folded over the first metal insert.

2. The sealed semiconductor power module of claim 1, wherein the base plate comprises a nickel and gold plating.

3. The sealed semiconductor power module of claim 1, wherein the base plate is comprised of molybdenum.

4. The sealed semiconductor power module of claim 1, wherein the base plate is comprised of aluminum, silicon and carbon.

5. The sealed semiconductor power module of claim 1, wherein the cover is comprised of an injection molded electrically conductive polymer.

6. The sealed semiconductor power module of claim 1, wherein the cover is physically attached to the base plate by an adhesive bond and is encapsulated with a soft gel.

7. The sealed semiconductor power module of claim 1, wherein the module comprises a rectifier.

8. The sealed semiconductor power module of claim 1, wherein the module comprises a silicon controlled rectifier.

9. The sealed semiconductor power module of claim 1, further comprising a fourth power terminal in direct wirebondless electrical connection with the substrate and having a fourth power terminal contact portion exposed over the top surface of the top of the cover.

10. The sealed semiconductor power module of claim 9, wherein the cover comprises second, third and fourth metal inserts;

the first, second, third, and fourth metal inserts configured to receive, respectively, the contact portion of the first power terminal, the contact portion of the second power terminal, the contact portion of the third power terminal, and the contact portion of the fourth power terminal.

11. A sealed semiconductor power module comprising:

a substrate disposed on a base plate, a top surface of the substrate including a first pad and a second pad;

a first die positioned on top of the first pad of the substrate, a top surface of the first die including a main contact area and a gate area each area being formed integral to said first die, the gate area being isolated from direct electrical contact with the main contact area;

a second die positioned on top of the second pad of the substrate, a top surface of the second die including a main contact area formed integral to said second die;

a lid including apertures above the first die and the second die;

a first power terminal in wirebondless electrical connection with the main contact area of the first die via a first metal tab;

a second power terminal in wirebondless electrical connection with the main contact area of the second die via a second metal tab;

a third power terminal in wirebondless electrical connection with the first pad via a third metal tab;

a gate terminal in electrical contact with the gate area

wherein the first power terminal, the second power terminal, the third power terminal, and the gate terminal each include a contact area and each contact area traverses a respective aperture of the lid and each contact area is exposed over a top surface of a top of the lid; and

wherein the lid comprises a first metal insert, and the first power terminal is folded over the first metal insert.

12. The sealed semiconductor power module of claim 11, wherein the substrate includes a directly bonded copper bonding bonded to both said top surface of said substrate and a bottom surface of said substrate.

13. The sealed semiconductor power module of claim 11, wherein the first die comprises a silicon controlled rectifier.

14. The sealed semiconductor power module of claim 11, further comprising a gate metal tab electrically connected to the first pad of the substrate.

15. The sealed semiconductor power module of claim 11, wherein the first metal tab, the second metal tab, and the third metal tab comprise molybdenum.

16. The sealed semiconductor power module of claim 11, wherein the lid includes second and third metal inserts;

the first, second, and third metal inserts configured to receive, respectively, the contact portion of the first power terminal, the contact portion of the second power terminal, and the contact portion of the third power terminal.

17. The sealed semiconductor power module of claim 11, wherein the substrate is comprised of aluminum and nitrogen.

18. The sealed semiconductor power module of claim 11, wherein the first die is interposed between the first metal tab and the substrate.

19. The sealed semiconductor power module of claim 11, wherein the first die comprises a rectifier.

20. The sealed semiconductor power module of claim 19, wherein the second die comprises a diode.