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Apparatus for variable resistive memory punchthrough access method

  • US 8,199,558 B2
  • Filed: 03/08/2011
  • Issued: 06/12/2012
  • Est. Priority Date: 10/30/2008
  • Status: Expired due to Fees
First Claim
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1. An apparatus comprising:

  • a plurality of bit lines and a plurality of source lines forming a cross-point array;

    a memory unit adjacent to at least selected cross-points of the cross-point array, the memory unit comprising a variable resistive data cell;

    a transistor electrically connected between the variable resistive data cell and one of the plurality of source lines, wherein a gate of the transistor is not electrically connected to a word line, source line or bit line and the transistor is configured to operate in punchthrough mode to write a data state to the memory unit.

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