Multi-bit memory with selectable magnetic layer
First Claim
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1. An apparatus comprising:
- a plurality of storage elements, each of the plurality of elements comprising a first selection layer with a low coercivity disposed between a first and second storage layers each with a high coercivity, where magnetic saturation of the first selection layer allows programming of a logical state to the second storage layer.
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Abstract
An apparatus and associated method for a multi-bit memory capable of being selected with a magnetic layer. Various embodiments of the present invention are generally directed to a first selection layer with a low coercivity that is disposed between first and second storage layers that each have a high coercivity. In response to magnetic saturation of the first selection layer, programming of a logical state to the second storage layer is allowed.
6 Citations
21 Claims
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1. An apparatus comprising:
a plurality of storage elements, each of the plurality of elements comprising a first selection layer with a low coercivity disposed between a first and second storage layers each with a high coercivity, where magnetic saturation of the first selection layer allows programming of a logical state to the second storage layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method comprising:
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providing a plurality of storage elements, each configured with a first selection layer with a low coercivity disposed between a first and second storage layers each with a high coercivity; and programming a first logical state to the second storage layer in response to magnetic saturation of the first selection layer. - View Dependent Claims (16, 17, 18)
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19. An apparatus comprising:
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a plurality of storage elements, each of the plurality of storage elements comprising;
a first selection layer with a low coercivity disposed between a first and second storage layers each with a high coercivity, the first storage layer being proximal to a program source; anda selection source that magnetically saturates the first selection layer with a magnetic field, the saturation of the first selection layer allowing a program field from the program source to concurrently program a first logical state to the first and second storage layers. - View Dependent Claims (20, 21)
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Specification