LED having vertical structure and method for fabricating the same
First Claim
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1. A method for fabricating a light emitting diode, comprising:
- forming a mask layer on a surface of a substrate;
forming a conductive semiconductor layer on the mask layer, wherein the conductive semiconductor layer is formed on the surface of the substrate to have a side surface having a tilt angle with respect to the surface of the substrate, and wherein the tilt angle is configured to improve the light extraction efficiency of the diode;
forming a semiconductor structure comprising a first-type semiconductor layer, an active layer, and a second-type semiconductor layer on the conductive semiconductor layer, wherein the conductive semiconductor layer is thicker than the semiconductor structure to serve as a template for growing the semiconductor structure;
forming a first electrode on the semiconductor structure;
forming a support layer on the first electrode;
separating the substrate; and
forming a second electrode on a surface of the conductive semiconductor layer.
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Abstract
A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layers, and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.
18 Citations
24 Claims
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1. A method for fabricating a light emitting diode, comprising:
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forming a mask layer on a surface of a substrate; forming a conductive semiconductor layer on the mask layer, wherein the conductive semiconductor layer is formed on the surface of the substrate to have a side surface having a tilt angle with respect to the surface of the substrate, and wherein the tilt angle is configured to improve the light extraction efficiency of the diode; forming a semiconductor structure comprising a first-type semiconductor layer, an active layer, and a second-type semiconductor layer on the conductive semiconductor layer, wherein the conductive semiconductor layer is thicker than the semiconductor structure to serve as a template for growing the semiconductor structure; forming a first electrode on the semiconductor structure; forming a support layer on the first electrode; separating the substrate; and forming a second electrode on a surface of the conductive semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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