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LED having vertical structure and method for fabricating the same

  • US 8,202,753 B2
  • Filed: 09/08/2010
  • Issued: 06/19/2012
  • Est. Priority Date: 12/15/2005
  • Status: Active Grant
First Claim
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1. A method for fabricating a light emitting diode, comprising:

  • forming a mask layer on a surface of a substrate;

    forming a conductive semiconductor layer on the mask layer, wherein the conductive semiconductor layer is formed on the surface of the substrate to have a side surface having a tilt angle with respect to the surface of the substrate, and wherein the tilt angle is configured to improve the light extraction efficiency of the diode;

    forming a semiconductor structure comprising a first-type semiconductor layer, an active layer, and a second-type semiconductor layer on the conductive semiconductor layer, wherein the conductive semiconductor layer is thicker than the semiconductor structure to serve as a template for growing the semiconductor structure;

    forming a first electrode on the semiconductor structure;

    forming a support layer on the first electrode;

    separating the substrate; and

    forming a second electrode on a surface of the conductive semiconductor layer.

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