Method of manufacturing transistor
First Claim
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1. A method of manufacturing a transistor, the method comprisingforming a gate on a substrate;
- forming a spacer on lateral side walls of the gate and on an adjacent portion of the substrate;
modifying material of the spacer such that the modified spacer covers only a lower portion of the lateral side walls of the gate;
providing source/drain regions in the modified spacer;
wherein the modifying comprises rearranging the material of the spacer so that the rearranged spacer covers only a lower portion of the lateral side walls of the gate and an increased portion of the substrate.
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Abstract
A method of manufacturing a transistor (300), the method comprising forming a gate (101) on a substrate (102), forming a spacer (201) on lateral side walls of the gate (101) and on an adjacent portion (202) of the substrate (102), modifying material of the spacer (201) so that the modified spacer (301) covers only a lower portion (303) of the lateral side walls of the gate (101), and providing source/drain regions (301) in the modified spacer (301).
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Citations
9 Claims
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1. A method of manufacturing a transistor, the method comprising
forming a gate on a substrate; -
forming a spacer on lateral side walls of the gate and on an adjacent portion of the substrate; modifying material of the spacer such that the modified spacer covers only a lower portion of the lateral side walls of the gate; providing source/drain regions in the modified spacer; wherein the modifying comprises rearranging the material of the spacer so that the rearranged spacer covers only a lower portion of the lateral side walls of the gate and an increased portion of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification