Method of forming through silicon via with dummy structure
First Claim
1. A method of forming a through silicon via (TSV) structure, said method comprising:
- forming an interconnect pad over a substrate;
forming an under layer over the interconnect pad;
forming a vertical conductive post at least partially through the substrate;
forming at least one dummy structure at least partially through the under layer; and
forming a top pad over the dummy structure and the vertical conductive post, wherein the top pad covers a wider area than a cross section of the vertical conductive post, the interconnect pad is electrically connected to the top pad, and the dummy structure connects the top pad and the under layer thereby fastening the top pad and the interconnect pad.
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Abstract
A method of forming a through silicon via (TSV) structure includes forming an interconnect pad over a substrate. An under layer is formed over the interconnect pad. A vertical conductive post is formed at least partially through the substrate. At least one dummy structure is formed at least partially through the under layer. A top pad is formed over the dummy structure and the vertical conductive post. The top pad covers a wider area than a cross section of the vertical conductive post. The interconnect pad is electrically connected to the top pad. The dummy structure connects the top pad and the under layer thereby fastening the top pad and the interconnect pad.
36 Citations
20 Claims
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1. A method of forming a through silicon via (TSV) structure, said method comprising:
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forming an interconnect pad over a substrate; forming an under layer over the interconnect pad; forming a vertical conductive post at least partially through the substrate; forming at least one dummy structure at least partially through the under layer; and forming a top pad over the dummy structure and the vertical conductive post, wherein the top pad covers a wider area than a cross section of the vertical conductive post, the interconnect pad is electrically connected to the top pad, and the dummy structure connects the top pad and the under layer thereby fastening the top pad and the interconnect pad. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a through silicon via (TSV) structure, said method comprising:
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forming an interconnect pad over a substrate; forming an under layer over the interconnect pad, the under layer including an isolation layer; forming a vertical conductive post at least partially through the substrate; forming at least one dummy structure at least partially through the under layer; forming a top pad over the dummy structure and the vertical conductive post, wherein the top pad covers a wider area than a cross section of the vertical conductive post, the interconnect pad is connected to the top pad, and the dummy structure connects the top pad and the under layer thereby fastening the top pad and the interconnect pad; and polishing a backside of the substrate to expose the vertical conductive post on the backside. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of forming a through silicon via (TSV) structure, said method comprising;
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forming an interconnect pad over a substrate; forming an under layer over the interconnect pad, the under layer including an isolation layer; forming a vertical conductive post at least partially through the substrate; etching the under layer to form space for at least one dummy structure; forming the at least one dummy structure at least partially through the under layer; forming a top pad over the dummy structure and the vertical conductive post, wherein the top pad covers a wider area than a cross section of the vertical conductive post, the interconnect pad is connected to the top pad, and the dummy structure connects the top pad and the under layer thereby fastening the top pad and the interconnect pad; polishing a backside of the substrate to expose the vertical conductive post on the backside; and forming a backside interconnect layer below the substrate, the backside interconnect layer being connected to the vertical conductive post.
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Specification