Multi-junction solar cells and methods and apparatuses for forming the same
First Claim
1. A tandem junction photovoltaic device, comprising:
- a first photovoltaic junction and a second photovoltaic junction, wherein the first photovoltaic junction comprises;
a p-type amorphous silicon layer;
a p-i buffer intrinsic type amorphous silicon layer;
a bulk intrinsic type amorphous silicon layer, wherein the p-i buffer intrinsic type amorphous silicon layer and the bulk intrinsic type amorphous silicon layer are deposited in a single processing chamber by supplying a gas mixture including a silicon containing gas and a hydrogen containing gas, wherein the hydrogen containing gas supplied into the processing chamber is gradually reduced to smoothly transition depositing the p-i buffer intrinsic type amorphous silicon layer to depositing the bulk intrinsic type amorphous silicon layer; and
a n-type microcrystalline silicon layer; and
wherein the second photovoltaic junction comprises;
a p-doped microcrystalline silicon layer;
an intrinsic type microcrystalline silicon layer; and
a n-doped amorphous silicon layer adjacent to the intrinsic type microcrystalline silicon layer.
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Abstract
Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. Embodiments of the present invention also include an improved thin film silicon solar cell, and methods and apparatus for forming the same, where one or more of the layers in the solar cell comprises at least one amorphous silicon layer that has improved electrical characteristics and mechanical properties, and is capable of being deposited at rates many times faster than conventional amorphous silicon deposition processes.
191 Citations
17 Claims
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1. A tandem junction photovoltaic device, comprising:
a first photovoltaic junction and a second photovoltaic junction, wherein the first photovoltaic junction comprises; a p-type amorphous silicon layer; a p-i buffer intrinsic type amorphous silicon layer; a bulk intrinsic type amorphous silicon layer, wherein the p-i buffer intrinsic type amorphous silicon layer and the bulk intrinsic type amorphous silicon layer are deposited in a single processing chamber by supplying a gas mixture including a silicon containing gas and a hydrogen containing gas, wherein the hydrogen containing gas supplied into the processing chamber is gradually reduced to smoothly transition depositing the p-i buffer intrinsic type amorphous silicon layer to depositing the bulk intrinsic type amorphous silicon layer; and a n-type microcrystalline silicon layer; and
wherein the second photovoltaic junction comprises;a p-doped microcrystalline silicon layer; an intrinsic type microcrystalline silicon layer; and a n-doped amorphous silicon layer adjacent to the intrinsic type microcrystalline silicon layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
Specification