Photonic structure

• US 8,203,137 B2
• Filed: 07/13/2009
• Issued: 06/19/2012
• Est. Priority Date: 07/13/2009
• Status: Active Grant

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Cho, Hans S., Fattal, David A., Kamins, Theodore I.
• Primary Examiner(s): Landau, Matthew
• Assistant Examiner(s): BACHNER, ROBERT G
• Application Number:
  US12/501,844
• Publication Number:
  US 20110006284A1
• Time in Patent Office: 1,072 Days
• Field of Search: 257/14
• US Class Current: 257/14
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 1/005 made of photonic crystals or photonic band gap materials photonic band-gap structures or photonic lattices in integrated optics G02B6/1225; photonic band-gap structures or photonic lattices in optical fibres G02B6/02295
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: G02B 6/136 by etching

Abstract

A photonic structure includes a plurality of annealed, substantially smooth-surfaced ellipsoids arranged in a matrix. Additionally, a method of producing a photonic structure is provided. The method includes providing a semiconductor material, providing an etch mask comprising a two-dimensional hole array, and disposing the etch mask on at least one surface of the semiconductor material. The semiconductor material is then etched through the hole array of the etch mask to produce holes in the semiconductor material and thereafter applying a passivation layer to surfaces of the holes. Additionally, the method includes repeating the etching and passivation-layer application to produce a photonic crystal structure that contains ellipsoids within the semiconductor material and annealing the photonic crystal structure to smooth the surfaces of the ellipsoids.

Claims

1. A photonic structure comprising:

a matrix material; and

a plurality of ellipsoids arranged within the matrix material, in which the each of the ellipsoids is defined by a surface that is annealed such that surface diffusion redistributes material on the surface to redefine a shape of the ellipsoid and remove light scattering optical defects from the surface;

in which the ellipsoids and the matrix material comprise different semiconductor materials.

2. The photonic structure of claim 1, in which the ellipsoids are substantially spherical.

3. The photonic structure of claim 1, in which the ellipsoids and the matrix material comprise different refractive indices.

4. The photonic structure of claim 1, in which at least two vertically adjacent ellipsoids are physically separated by the matrix material.

5. The photonic structure of claim 1, in which the ellipsoids comprise an oxide coating on the surface.

6. The photonic structure of claim 1, in which the ellipsoids are sized and spaced to achieve a band gap for a desired range of photonic radiation frequencies.

7. The photonic structure of claim 1, in which the matrix material comprises silicon and the ellipsoids comprise germanium.

8. The photonic structure of claim 1, in which the ellipsoids are connected by a channel having a smaller diameter than the ellipsoids.

9. The photonic structure of claim 1, in which the ellipsoids are arranged in a periodic array which has different periodicities in at least one of the x, y, and z directions.

10. The photonic structure of claim 1, in which the ellipsoids are physically separated by intervening matrix material and the surface comprises a closed surface.

11. The photonic structure of claim 1, in which the surface comprises an interface between the matrix material and a filling material.

12. The photonic structure of claim 11, in which the filling material is a crystal structure that is crystallographically aligned with a crystal structure of the matrix material.

13. The photonic structure of claim 11, in which the filling material in each ellipsoid is a single crystal.

14. The photonic structure of claim 13, in which the surface comprises a passivation layer covering annealed matrix material, one portion of the annealed matrix material being exposed by removal of the passivation layer, in which the exposed portion of the annealed matrix material serves as a nucleation site for the single crystal.

15. The photonic structure of claim 1, in which the ellipsoids are connected in one dimension to form a scalloped vertical columns, the columns being isolated from each other by intervening matrix material.

16. The photonic structure of claim 1, further comprising a semiconductor substrate, in which ellipsoids comprising semiconducting material grown from exposed portions of the semiconductor substrate, the ellipsoids being vertically joined on the semiconductor substrate to form an ordered array of solid ellipsoids arranged in columns.

17. A photonic structure comprising:

a semiconductor matrix material;

a plurality of substantially spherical closed ellipsoids periodically arranged within the matrix material in two or more dimensions and physically separated by the matrix material;

the ellipsoids comprising;

a volume filled with a second semiconductor material having a different index of refraction than the semiconductor matrix;

an annealed surface surrounding the volume, the annealed surface comprising redistributed material that smoothes the annealed surface, changes a geometric shape of the annealed surface to reduce the surface energy of the annealed surface and removes light scattering optical defects from the annealed surface; and

a coating of oxide material disposed over the annealed surface.