Semiconductor device having a metal oxide channel

• US 8,203,144 B2
• Filed: 05/13/2010
• Issued: 06/19/2012
• Est. Priority Date: 03/12/2004
• Status: Active Grant

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Hoffman, Randy L., Herman, Gregory S., Mardilovich, Peter P.
• Primary Examiner(s): NGUYEN, THANH T
• Application Number:
  US12/779,348
• Publication Number:
  US 20100219411A1
• Time in Patent Office: 768 Days
• Field of Search: 257/103, 257/368, 257/347, 257/43, 257/59, 257/E21.078, 257/E29.068
• US Class Current: 257/43
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: Y10T 408/5633 Adapted to coaxially grip round work

Abstract

A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.

Claims

1. A semiconductor device, comprising:

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes a metal oxide having one or more compounds of formula A_xB_xC_xD_xO_x wherein A is In, B is Ga, C is Zn, D is Cd, O is atomic oxygen, and wherein each x is independently a non-zero integer;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel.

2. The semiconductor device of claim 1, wherein the channel includes one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

3. The semiconductor device of claim 1, wherein the one or more compounds of the formula A_xB_xC_xD_xO_x includes an atomic composition of ratio A:

B;

C;

D, wherein A, B, C, and D are each in a range of about 0.017 to about 0.95.

4. The semiconductor device of claim 1, wherein the metal oxide includes one or more metal oxides including indium, gallium, zinc, and cadmium.

5. A semiconductor device, comprising:

a drain electrode;

a source electrode;

a channel to electrically couple the drain electrode and the source electrode, wherein the channel includes an indium-gallium-zinc metal oxide formed from a precursor composition that includes indium, gallium, and zinc oxides, wherein the formed indium-gallium-zinc metal oxide is in an amorphous form; and

a gate electrode separated from the channel by a gate dielectric.

6. The semiconductor device of claim 5, wherein the source, drain, and gate electrodes include a substantially transparent material.

7. The semiconductor device of claim 5, wherein the channel is deposited with an ink-jet deposition technique.

8. The semiconductor device of claim 5, including a substrate or substrate assembly upon which the semiconductor device is formed.