Semiconductor device having a metal oxide channel
First Claim
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1. A semiconductor device, comprising:
- a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes a metal oxide having one or more compounds of formula AxBxCxDxOx wherein A is In, B is Ga, C is Zn, D is Cd, O is atomic oxygen, and wherein each x is independently a non-zero integer;
a gate electrode; and
a gate dielectric positioned between the gate electrode and the channel.
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Abstract
A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.
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Citations
8 Claims
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1. A semiconductor device, comprising:
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a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes a metal oxide having one or more compounds of formula AxBxCxDxOx wherein A is In, B is Ga, C is Zn, D is Cd, O is atomic oxygen, and wherein each x is independently a non-zero integer; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device, comprising:
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a drain electrode; a source electrode; a channel to electrically couple the drain electrode and the source electrode, wherein the channel includes an indium-gallium-zinc metal oxide formed from a precursor composition that includes indium, gallium, and zinc oxides, wherein the formed indium-gallium-zinc metal oxide is in an amorphous form; and a gate electrode separated from the channel by a gate dielectric. - View Dependent Claims (6, 7, 8)
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Specification