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Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices

  • US 8,203,159 B2
  • Filed: 09/24/2010
  • Issued: 06/19/2012
  • Est. Priority Date: 02/17/2006
  • Status: Active Grant
First Claim
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1. An optoelectronic device, comprising:

  • (a) one or more first oblique or facetted surfaces formed on a substrate or template, wherein;

    the first oblique or facetted surfaces are one or more semi-polar planes or one or more non-polar planes, andthe first oblique or facetted surfaces are etched surfaces; and

    (b) one or more active layers formed epitaxially on the first oblique or facetted surfaces or on one or more epitaxial layers formed on the first oblique or facetted surfaces, wherein;

    at least one of the active layers includes Indium and has a top surface comprising one or more second oblique or facetted surfaces, andthe second oblique or facetted surfaces are one or more semi-polar planes or one or more non-polar planes;

    (c) wherein at least one of the active layers, epitaxial layers, substrate, or template, is comprised of (Al, Ga, In)N-based material.

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