Light emitting device having vertical structrue and method for manufacturing the same
First Claim
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1. A light emitting device having a vertical structure, comprising:
- a conductive support structure comprising a support layer;
a bonding layer on the conductive support structure;
a first electrode on the bonding layer, the first electrode comprising a reflective electrode;
a metal layer arranged between the first electrode and the bonding layer, wherein the ductility of the metal layer is higher than the ductility of the support layer, and wherein a width of the metal layer is greater than a width of the first electrode;
a semiconductor structure having multi-layers on the first electrode, the semiconductor structure having an inclined side surface, wherein the semiconductor structure comprises a first-type semiconductor layer on the first electrode, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer;
a passivation layer on the semiconductor structure, wherein the passivation layer contacts the metal layer; and
a second electrode on the semiconductor structure.
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Abstract
A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of damping impact generated during a substrate separation process and achieving an improvement in mass productivity, are disclosed. The light emitting device includes a semiconductor layer having a multilayer structure, a first electrode arranged at one surface of the semiconductor layer, a metal support arranged on the first electrode, and an impact damping layer arranged between the first electrode and the metal support, and made of a metal having a ductility higher than a ductility of a metal for the metal support.
9 Citations
24 Claims
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1. A light emitting device having a vertical structure, comprising:
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a conductive support structure comprising a support layer; a bonding layer on the conductive support structure; a first electrode on the bonding layer, the first electrode comprising a reflective electrode; a metal layer arranged between the first electrode and the bonding layer, wherein the ductility of the metal layer is higher than the ductility of the support layer, and wherein a width of the metal layer is greater than a width of the first electrode; a semiconductor structure having multi-layers on the first electrode, the semiconductor structure having an inclined side surface, wherein the semiconductor structure comprises a first-type semiconductor layer on the first electrode, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer; a passivation layer on the semiconductor structure, wherein the passivation layer contacts the metal layer; and a second electrode on the semiconductor structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification