Trench MOSFET semiconductor device and manufacturing method therefor
First Claim
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1. A semiconductor device comprising:
- a semiconductor body comprising a first surface, a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the first semiconductor region and the second semiconductor region forming a pn-junction;
a source metallization arranged on the first surface; and
a trench extending from the first surface into the semiconductor body and comprising, in a horizontal plane substantially parallel to the first surface, a first trench portion and a second trench portion; and
the first trench portion comprising a gate electrode connected to the source metallization and an insulating layer arranged between the gate electrode and the second semiconductor region;
the second trench portion comprising a conductive plug which is connected to the source metallization and to the second semiconductor region;
wherein the first semiconductor region forms a source region which is connected to the source metallization and extends to the first surface;
wherein the second semiconductor region forms a body region;
wherein the semiconductor body further comprises a drift region of the first conductivity type adjacent to the body region; and
wherein the first trench portion and the second trench portion extend through the source region and at least partially into the body region; and
wherein the semiconductor body further comprises a body contact region of the second conductivity type which provides an electrical connection between the body region and the conductive plug of the second trench portion;
wherein the body region comprises a first doping concentration; and
wherein the body contact region comprises a second doping concentration which is higher than the first doping concentration.
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Abstract
A semiconductor device having a semiconductor body, a source metallization arranged on a first surface of the semiconductor body and a trench including a first trench portion and a second trench portion and extending from the first surface into the semiconductor body is provided. The semiconductor body further includes a pn-junction formed between a first semiconductor region and a second semiconductor region. The first trench portion includes an insulated gate electrode which is connected to the source metallization, and the second trench portion includes a conductive plug which is connected to the source metallization and to the second semiconductor region.
17 Citations
15 Claims
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1. A semiconductor device comprising:
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a semiconductor body comprising a first surface, a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the first semiconductor region and the second semiconductor region forming a pn-junction; a source metallization arranged on the first surface; and a trench extending from the first surface into the semiconductor body and comprising, in a horizontal plane substantially parallel to the first surface, a first trench portion and a second trench portion; and the first trench portion comprising a gate electrode connected to the source metallization and an insulating layer arranged between the gate electrode and the second semiconductor region;
the second trench portion comprising a conductive plug which is connected to the source metallization and to the second semiconductor region;wherein the first semiconductor region forms a source region which is connected to the source metallization and extends to the first surface;
wherein the second semiconductor region forms a body region;
wherein the semiconductor body further comprises a drift region of the first conductivity type adjacent to the body region; and
wherein the first trench portion and the second trench portion extend through the source region and at least partially into the body region; andwherein the semiconductor body further comprises a body contact region of the second conductivity type which provides an electrical connection between the body region and the conductive plug of the second trench portion;
wherein the body region comprises a first doping concentration; and
wherein the body contact region comprises a second doping concentration which is higher than the first doping concentration. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a source metallization; a field-effect structure comprising a source region of a first conductivity type connected to the source metallization, a body region of a second conductivity type adjacent to the source region, a drift region of the first conductivity type adjacent to the body region and a first insulated gate electrode; a trench comprising a first trench portion and a second trench portion, the first trench portion comprising a second insulated gate electrode and an insulating layer arranged between the gate electrode and the body region and connected to the source metallization;
the second trench portion comprising a conductive plug electrically connecting the source metallization with the body region; anda body contact region of the second conductivity type which adjoins the body region and a lower part of the second trench portion;
wherein the body region has a first doping concentration; and
wherein the body contact region has a second doping concentration which is higher than the first doping concentration. - View Dependent Claims (9, 10)
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11. A power semiconductor device comprising:
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a source metallization; a field-effect structure comprising a source region of a first conductivity type connected to the source metallization, a body region of a second conductivity type adjacent to the source region, a drift region of the first conductivity type adjacent to the body region and a first trench comprising an insulated gate electrode; and a second trench comprising a first trench portion and a second trench portion, the first trench portion comprising a second gate electrode connected to the source metallization and an insulating layer arranged between the second gate electrode and the body region;
the second trench portion comprising a conductive plug electrically connecting the source metallization with the body region;wherein the conductive plug and the second gate electrode are formed by a common conductive structure. - View Dependent Claims (12, 13)
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14. A method for forming a semiconductor device comprising:
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providing a semiconductor body comprising a first surface, a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the first semiconductor region comprising a first doping concentration, the first semiconductor region and the second semiconductor region forming a pn-junction; forming a trench such that the trench extends from the first surface into the semiconductor body and comprises, in a horizontal plane substantially parallel to the first surface, a first trench portion and second trench portion; forming a gate electrode and an insulating layer arranged between the gate electrode and the second semiconductor region in the first trench portion; forming a conductive plug in the second trench portion such that the conductive plug is connected with the second semiconductor region; forming a source metallization on the first surface such that the source metallization is connected to the gate electrode and the conductive plug; and forming a third semiconductor region of the second conductivity type such that the third semiconductor region adjoins the second semiconductor region, is electrically connected to the conductive plug and comprises a doping concentration which is higher than the first doping concentration.
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15. A semiconductor device comprising:
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a semiconductor body comprising a first surface, a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the first semiconductor region and the second semiconductor region forming a pn-junction; a source metallization arranged on the first surface; and a trench extending from the first surface into the semiconductor body and comprising, in a horizontal plane substantially parallel to the first surface, a first trench portion and a second trench portion; and the first trench portion comprising a gate electrode connected to the source metallization and an insulating layer arranged between the gate electrode'"'"'and the second semiconductor region;
the second trench portion comprising a conductive plug which is connected to the source metallization and to the second semiconductor region;wherein the first trench portion comprises a first vertical depth; and
wherein the second trench portion comprises a second vertical depth which is lower than the first vertical depth.
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Specification