Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration
First Claim
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1. A method for forming a substrate device, the method comprising:
- forming a substrate stack comprising (i) an electrically isolative layer, (ii) voltage switchable dielectric (VSD) material that underlies the electrically isolative material, and (iii) a grounding electrode, the VSD material overlaying the grounding electrode;
forming an opening into the electrically isolative layer without extending the opening through the layer of VSD material; and
forming conductive material on at least a portion of the opening in order to form a first electrode that is in contact with VSD material.
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Abstract
A substrate device includes an embedded layer of VSD material that overlays a conductive element or layer to provide a ground. An electrode, connected to circuit elements that are to be protected, extends into the thickness of the substrate to make contact with the VSD layer. When the circuit elements are operated under normal voltages, the VSD layer is dielectric and not connected to ground. When a transient electrical event occurs on the circuit elements, the VSD layer switches instantly to a conductive state, so that the first electrode is connected to ground.
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Citations
13 Claims
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1. A method for forming a substrate device, the method comprising:
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forming a substrate stack comprising (i) an electrically isolative layer, (ii) voltage switchable dielectric (VSD) material that underlies the electrically isolative material, and (iii) a grounding electrode, the VSD material overlaying the grounding electrode; forming an opening into the electrically isolative layer without extending the opening through the layer of VSD material; and forming conductive material on at least a portion of the opening in order to form a first electrode that is in contact with VSD material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification