Method of manufacturing gallium nitride-based compound semiconductor light-emitting device, gallium nitride-based compound semiconductor light-emitting device, and lamp

• US 8,207,003 B2
• Filed: 04/23/2007
• Issued: 06/26/2012
• Est. Priority Date: 04/24/2006
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Showa Denko KK
• Inventors: Fukunaga, Naoki, Osawa, Hiroshi
• Primary Examiner(s): Tran, Tony
• Application Number:
  US12/297,989
• Publication Number:
  US 20090090922A1
• Time in Patent Office: 1,891 Days
• Field of Search: 438 46- 47, 257/E21.347, 257/E21.475, 257/E21.596, 257/94, 257/E21.002, 257/E33.025
• US Class Current: 438/47
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/5813 using lasers
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (Vf) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide film 15 including a dopant is laminated on a p-type semiconductor layer 14 of a gallium nitride-based compound semiconductor device 1. The transparent conductive oxide film 15 is subjected to a laser annealing process using a laser after the lamination of the transparent conductive oxide film 15.

Claims

1. A method of manufacturing a gallium nitride-based compound semiconductor light-emitting device, in which a transparent conductive oxide film including a dopant is laminated on a p-type semiconductor layer of a gallium nitride-based compound semiconductor device, the method comprising the step of subjecting the transparent conductive oxide film to a laser annealing process using an excimer laser, and the step of subjecting the transparent conductive oxide film to a thermal annealing process at a range of temperature of 200 to 250°

C., wherein energy density of the excimer laser in the laser annealing process falls within a range of 150 to 300 mJcm<sup>−

2</sup>, the p-type semiconductor layer comprises Ga, and the transparent conductive oxide film contains Ga in a concentration of 20 atoms % or below at a location within 1 nm from the interface between the transparent conductive oxide film and the p-type semiconductor layer, and

the laser annealing process includes the step of forming unevenness on a surface of the transparent conductive oxide film using an excimer laser.

2. The method according to claim 1, wherein the laser annealing process is performed using a KrF excimer laser or an ArF excimer laser as the excimer laser.

3. The method according to claim 1, wherein the laser annealing process includes irradiating the transparent conductive oxide film with pulses within a range of 1 to 20 times using an excimer laser.