Method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide semiconductor layer on an insulating layer;
performing dehydration or dehydrogenation by a heat treatment at a temperature higher than or equal to 400°
C. on the oxide semiconductor layer and then cooling the oxide semiconductor layer in an atmosphere containing oxygen;
forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer after the step of dehydration or dehydrogenation; and
forming an oxide insulating film over the insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer,wherein the oxide insulating film is in contact with part of the oxide semiconductor layer.
1 Assignment
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Accused Products
Abstract
An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.
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Citations
41 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer on an insulating layer; performing dehydration or dehydrogenation by a heat treatment at a temperature higher than or equal to 400°
C. on the oxide semiconductor layer and then cooling the oxide semiconductor layer in an atmosphere containing oxygen;forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer after the step of dehydration or dehydrogenation; and forming an oxide insulating film over the insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, wherein the oxide insulating film is in contact with part of the oxide semiconductor layer. - View Dependent Claims (2, 3, 15, 19)
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4. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over an insulating layer; heating the oxide semiconductor layer at a temperature higher than or equal to 400°
C. so as to decrease a hydrogen concentration in the oxide semiconductor layer and then cooling the oxide semiconductor layer in an atmosphere containing oxygen;forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer after the step of heating; and forming an oxide insulating film over the insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, wherein the oxide insulating film is in contact with part of the oxide semiconductor layer. - View Dependent Claims (5, 6, 16, 20)
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7. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over an insulating layer; heating the oxide semiconductor layer in an inert atmosphere at a temperature higher than or equal to 400°
C. so that a carrier concentration of the oxide semiconductor layer is increased, and then slowly cooling the oxide semiconductor layer in an atmosphere containing oxygen;forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer after the step of heating; and forming an oxide insulating film over the insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, wherein the oxide insulating film is in contact with part of the oxide semiconductor layer, whereby the carrier concentration of the oxide semiconductor layer is reduced. - View Dependent Claims (8, 9, 10, 13, 17, 21)
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11. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over an insulating layer; performing a heat treatment on the oxide semiconductor layer by heating the oxide semiconductor layer under reduced pressure at a temperature higher than or equal to 400°
C. so that a carrier concentration of the oxide semiconductor layer is increased and then cooling the oxide semiconductor layer in an atmosphere containing oxygen;forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer after the step of heating; and forming an oxide insulating film over the insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, wherein the oxide insulating film is in contact with part of the oxide semiconductor layer, whereby the carrier concentration of the oxide semiconductor layer is reduced. - View Dependent Claims (12, 14, 18, 22)
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23. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer on an insulating layer; performing dehydration or dehydrogenation on the oxide semiconductor layer and then cooling the oxide semiconductor layer in an atmosphere containing oxygen; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer after the step of dehydration or dehydrogenation; and forming an oxide insulating film over the insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, wherein the oxide insulating film is in contact with part of the oxide semiconductor layer, and wherein the oxide semiconductor layer after the step of heating comprises an amorphous oxide semiconductor including crystals. - View Dependent Claims (24, 25, 26)
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27. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over an insulating layer; heating the oxide semiconductor layer so as to decrease a hydrogen concentration in the oxide semiconductor layer and then cooling the oxide semiconductor layer in an atmosphere containing oxygen; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer after the step of heating; and forming an oxide insulating film over the insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, wherein the oxide insulating film is in contact with part of the oxide semiconductor layer, and wherein the oxide semiconductor layer after the step of heating comprises an amorphous oxide semiconductor including crystals. - View Dependent Claims (28, 29, 30, 34, 35)
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31. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over an insulating layer; heating the oxide semiconductor layer in an inert atmosphere so that a carrier concentration of the oxide semiconductor layer is increased, and then slowly cooling the oxide semiconductor layer in an atmosphere containing oxygen; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer after the step of heating; and forming an oxide insulating film over the insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, wherein the oxide semiconductor layer is in contact with part of the oxide semiconductor layer, whereby the carrier concentration of the oxide semiconductor layer is reduced, and wherein the oxide semiconductor layer after the step of heating comprises an amorphous oxide semiconductor including crystals. - View Dependent Claims (32, 33, 36, 37)
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38. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over an insulating layer; performing a heat treatment on the oxide semiconductor layer by heating the oxide semiconductor layer under reduced pressure so that a carrier concentration of the oxide semiconductor layer is increased and then cooling the oxide semiconductor layer in an atmosphere containing oxygen; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer after the step of heating; and forming an oxide insulating film over the insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, wherein the oxide insulating film is in contact with part of the oxide semiconductor layer, whereby the carrier concentration of the oxide semiconductor layer is reduced, and wherein the oxide semiconductor layer after the step of heating comprises an amorphous oxide semiconductor including crystals. - View Dependent Claims (39, 40, 41)
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Specification