Thin film transistor, display device using thin film transistor, and production method of thin film transistor
First Claim
1. A thin film transistor, comprising:
- a first gate electrode;
a first gate insulating layer covering said first gate electrode;
a semiconductor layer disposed on said first gate insulating layer;
a second gate insulating layer disposed on said semiconductor layer;
a second gate electrode disposed on said second gate insulating layer; and
a drain electrode and a source electrode which are electrically connected to said semiconductor layer, wherein;
said semiconductor layer comprises an oxide semiconductor containing at least one of Zn, Ga, In, and Sn;
said first gate electrode shields light entering said semiconductor layer from below;
said second gate electrode shields light entering said semiconductor layer from above; and
said second gate electrode is electrically connected to said first gate electrode by penetrating through an opening in said first gate insulating layer and an opening in said second gate insulating layer.
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Accused Products
Abstract
Provided is a thin film transistor including: a first gate electrode; a first gate insulating layer covering the first gate electrode; a semiconductor layer on the first gate insulating layer; a second gate insulating layer on the semiconductor layer; a second gate electrode on the second gate insulating layer; and a drain electrode and a source electrode electrically connected to the semiconductor layer, in which: the semiconductor layer is an amorphous oxide semiconductor containing at least one of Zn, Ga, In, and Sn; the first gate electrode shields light entering the semiconductor layer from below, and the second gate electrode shields light entering the semiconductor layer from above; and the second gate electrode is electrically connected to the first gate electrode by penetrating the first gate insulating layer and the second gate insulating layer, to thereby shield light entering the semiconductor layer from at least one of sides thereof.
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Citations
7 Claims
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1. A thin film transistor, comprising:
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a first gate electrode; a first gate insulating layer covering said first gate electrode; a semiconductor layer disposed on said first gate insulating layer; a second gate insulating layer disposed on said semiconductor layer; a second gate electrode disposed on said second gate insulating layer; and a drain electrode and a source electrode which are electrically connected to said semiconductor layer, wherein; said semiconductor layer comprises an oxide semiconductor containing at least one of Zn, Ga, In, and Sn; said first gate electrode shields light entering said semiconductor layer from below; said second gate electrode shields light entering said semiconductor layer from above; and said second gate electrode is electrically connected to said first gate electrode by penetrating through an opening in said first gate insulating layer and an opening in said second gate insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification
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- Resources
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Current AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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Original AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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InventorsTakahashi, Kenji, Hayashi, Ryo, Yaginuma, Seiichiro
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Primary Examiner(s)Pham, Long
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Application NumberUS12/858,605Publication NumberTime in Patent Office678 DaysField of Search257/43, 257/59, 257/66, 257/70, 257/76, 257/E29.095, 257/E21.411US Class Current257/43CPC Class CodesH01L 27/1225 with semiconductor material...H01L 29/7869 having a semiconductor body...
