Electronic device, semiconductor device and manufacturing method thereof
First Claim
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1. An active matrix display device comprising:
- a first insulating film formed over a substrate;
a gate electrode formed on and in contact with the first insulating film;
a gate insulating film over the gate electrode;
a semiconductor layer over the gate electrode with the gate insulating film interposed therebetween, the semiconductor layer comprising a metal oxide comprising indium, gallium and zinc;
a channel protective film comprising an inorganic insulating film on and in contact with a portion of the semiconductor layer;
a first electrode and a second electrode, each in electrical contact with the semiconductor layer;
a second insulating film formed over the first electrode, the second electrode, the channel protective film and the semiconductor layer; and
a pixel electrode formed over the second insulating film and electrically connected to one of the first electrode and the second electrode,wherein the first insulating film comprises a material selected from the group consisting of silicon nitride and silicon nitride oxide, andwherein the second insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride, silicon nitride oxide and silicon oxynitride.
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Abstract
The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.
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Citations
12 Claims
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1. An active matrix display device comprising:
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a first insulating film formed over a substrate; a gate electrode formed on and in contact with the first insulating film; a gate insulating film over the gate electrode; a semiconductor layer over the gate electrode with the gate insulating film interposed therebetween, the semiconductor layer comprising a metal oxide comprising indium, gallium and zinc; a channel protective film comprising an inorganic insulating film on and in contact with a portion of the semiconductor layer; a first electrode and a second electrode, each in electrical contact with the semiconductor layer; a second insulating film formed over the first electrode, the second electrode, the channel protective film and the semiconductor layer; and a pixel electrode formed over the second insulating film and electrically connected to one of the first electrode and the second electrode, wherein the first insulating film comprises a material selected from the group consisting of silicon nitride and silicon nitride oxide, and wherein the second insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride, silicon nitride oxide and silicon oxynitride. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An active matrix display device comprising:
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a first insulating film formed over a substrate; a gate electrode formed on and in contact with the first insulating film; a gate insulating film over the gate electrode; a semiconductor layer over the gate electrode with the gate insulating film interposed therebetween, the semiconductor layer comprising a metal oxide comprising indium, gallium and zinc; a channel protective film comprising an inorganic insulating film on and in contact with a portion of the semiconductor layer; a first electrode and a second electrode, each in electrical contact with the semiconductor layer; a second insulating film formed over the first electrode, the second electrode, the channel protective film and the semiconductor layer; a third electrode formed over the second insulating film and electrically connected to one of the first electrode and the second electrode; a third insulating film formed over the third electrode and the second insulating film; a fourth electrode formed over the third insulating film and electrically connected to the third electrode; a light emitting layer formed over the fourth electrode; a fifth electrode formed over the light emitting layer, wherein the first insulating film comprises a material selected from the group consisting of silicon nitride and silicon nitride oxide, and wherein the second insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride, silicon nitride oxide and silicon oxynitride. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsMaekawa, Shinji, Kuwabara, Hideaki
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Primary Examiner(s)Ho, Anthony
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Application NumberUS12/327,876Publication NumberTime in Patent Office1,300 DaysField of Search257/59, 257/72US Class Current257/59CPC Class CodesH01L 29/41733 for thin film transistors w...H01L 29/458 for thin film silicon, e.g....H01L 29/66765 Lateral single gate single ...H01L 29/78678 with inverted-type structur...H01L 29/7869 having a semiconductor body...
