Thin film transistor
First Claim
1. A thin film transistor comprising:
- a gate electrode;
a first insulating layer over the gate electrode;
a second insulating layer and a third insulating layer, which are provided over the first insulating layer;
a first microcrystalline semiconductor layer over the second insulating layer;
a second microcrystalline semiconductor layer over the third insulating layer; and
an amorphous semiconductor layer over the first insulating layer, wherein at least a part of the amorphous semiconductor layer is provided between the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer, and is in contact with the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer,wherein a composition of the first insulating layer is different from a composition of the second insulating layer and a composition of the third insulating layer.
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Abstract
A thin film transistor includes a first insulating layer covering the gate electrode layer; source and drain regions which at least partly overlaps with the gate electrode layer; a pair of second insulating layers which is provided apart from each other in a channel length direction over the first insulating layer and which at least partly overlaps with the gate electrode layer and the pair of impurity semiconductor layers; a pair of microcrystalline semiconductor layers provided apart from each other on and in contact with the second insulating layers; and an amorphous semiconductor layer covering the first insulating layer, the pair of second insulating layers, and the pair of microcrystalline semiconductor layers and which extends to exist between the pair of microcrystalline semiconductor layers. The first insulating layer is a silicon nitride layer and each of the pair of the second insulating layers is a silicon oxynitride layer.
24 Citations
24 Claims
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1. A thin film transistor comprising:
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a gate electrode; a first insulating layer over the gate electrode; a second insulating layer and a third insulating layer, which are provided over the first insulating layer; a first microcrystalline semiconductor layer over the second insulating layer; a second microcrystalline semiconductor layer over the third insulating layer; and an amorphous semiconductor layer over the first insulating layer, wherein at least a part of the amorphous semiconductor layer is provided between the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer, and is in contact with the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer, wherein a composition of the first insulating layer is different from a composition of the second insulating layer and a composition of the third insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A thin film transistor comprising:
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a gate electrode; a first insulating layer over the gate electrode; a second insulating layer and a third insulating layer, which are provided over the first insulating layer; a first microcrystalline semiconductor layer over the second insulating layer; a second microcrystalline semiconductor layer over the third insulating layer; and an amorphous semiconductor layer over the first insulating layer, wherein at least a part of the amorphous semiconductor layer is provided between the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer, and is in contact with the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer, wherein a composition of the first insulating layer is different from a composition of the second insulating layer and a composition of the third insulating layer, and wherein a whole of the first microcrystalline semiconductor layer and a whole of the second microcrystalline semiconductor layer overlap the gate electrode. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A thin film transistor comprising:
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a gate electrode; a first insulating layer over the gate electrode; a second insulating layer and a third insulating layer, which are provided over the first insulating layer; a first microcrystalline semiconductor layer over the second insulating layer; a second microcrystalline semiconductor layer over the third insulating layer; and an amorphous semiconductor layer over the first insulating layer, wherein at least a part of the amorphous semiconductor layer is provided between the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer, and is in contact with the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer, wherein a composition of the first insulating layer is different from a composition of the second insulating layer and a composition of the third insulating layer, and wherein each of the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer includes an impurity element serving as a donor. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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Specification