Semiconductor light-emitting device and method for manufacturing the same

• US 8,207,546 B2
• Filed: 05/14/2007
• Issued: 06/26/2012
• Est. Priority Date: 05/17/2006
• Status: Active Grant

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Harada, Mitsunori, Sato, Masanori
• Primary Examiner(s): Bryant, Kiesha
• Assistant Examiner(s): WARD, ERIC A
• Application Number:
  US11/747,989
• Publication Number:
  US 20070267643A1
• Time in Patent Office: 1,870 Days
• Field of Search: 257 79-103, 257/676, 257/E33.073, 438 22- 47, 438106-127
• US Class Current: 257/98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

A reliable semiconductor light-emitting device and a method for manufacturing the same can be provided in which peeling can be prevented in a phase boundary, and optical axis positional errors between the optical lens and a semiconductor light-emitting chip can be reduced or prevented. The semiconductor light-emitting device can include a base board having at least one chip, a reflector fixed on the base board so as to enclose the chip, and an encapsulating resin disposed in the reflector. An optical lens can include a concave-shaped cavity that has an inner corner surface having a plurality of convex portions thereon. The optical lens can be located adjacent the reflector by contacting the lens with a top surface of the reflector so as to enclose the reflector. A spacer that is disposed between the concave-shaped cavity and the reflector can ease a stress that is generated due to temperature changes.

Claims

1. A semiconductor light-emitting device comprising:

a base board having at least one pair of chip mounting portions;

at least one semiconductor light-emitting chip located adjacent the base board and configured to emit light along an optical axis of the device;

a reflector located adjacent the base board and the at least one semiconductor light-emitting chip, the reflector including an inner side surface configured to reflect light from the at least one semiconductor light emitting chip during operation of the at least one semiconductor light emitting chip, an outer peripheral side surface facing away from and opposed to the inner side surface, and a top surface located between the inner side surface and the outer peripheral side surface, the outer peripheral side surface being an outermost peripheral surface of the reflector in a radial direction away from the optical axis of the device;

an encapsulating resin disposed in the reflector;

an optical lens having a concave-shaped cavity including an inner corner surface and a plurality of convex portions located at the inner corner surface, the plurality of convex portions contacting the top surface of the reflector and configured to face the top surface of the reflector, and the optical lens being composed of a material having a first softness; and

a spacer composed of a transparent resin that has a second softness that is softer than the first softness of the material of the optical lens, the spacer being located between the concave-shaped cavity of the optical lens and the top surface of the reflector, including spaces between each of the plurality of convex portions of the optical lens, the spacer extending along the top surface of the reflector and extending downward towards the base board and along at least a portion of the outer peripheral side surface.

3. The semiconductor light-emitting device according to claim 1, wherein the encapsulating resin is at least one of a transparent resin and a mixture resin, and the mixture resin includes a resin mixed with at least one of a diffuser, a wavelength conversion material, and a pigment configured to selectively absorb light having a predetermined wavelength.

5. The semiconductor light-emitting device according to claim 1, wherein the plurality of convex portions of the optical lens are formed at substantially equal intervals with a width between substantially 0.1 mm and 2.0 mm and a height between substantially 0.1 mm and 2.0 mm, the width and height being measured in a plane that is substantially perpendicular to an optical axis of the device.

7. The semiconductor light-emitting device according to claim 3, wherein the plurality of convex portions of the optical lens are formed at substantially equal intervals with a width between substantially 0.1 mm and 2.0 mm and a height between substantially 0.1 mm and 2.0 mm, the width and height being measured in a plane that is substantially perpendicular to an optical axis of the device.

9. The semiconductor light-emitting device according to claim 1, wherein the spacer is composed of the same material as the encapsulating resin.

11. The semiconductor light-emitting device according to claim 3, wherein the spacer is composed of the same material as the encapsulating resin.

13. The semiconductor light-emitting device according to claim 5, wherein the spacer is composed of the same material as the encapsulating resin.

15. The semiconductor light-emitting device according to claim 7, wherein the spacer is composed of the same material as the encapsulating resin.

17. A method for manufacturing a semiconductor light-emitting device according to claim 1, comprising:

providing the base board that includes at least one pair of chip mounting portions, at least one semiconductor light-emitting chip electrically connected to the base board, the reflector including a cavity that encloses the at least semiconductor light-emitting chip therein, and the optical lens including the concave shaped cavity;

filling an encapsulating resin in the cavity of the reflector and solidifying the encapsulating resin to a half solidified state by heating;

disposing the spacer that is not solidified over the reflector that includes the encapsulating resin;

disposing the optical lens that includes the concave-shaped cavity on the reflector; and

solidifying both the encapsulating resin and the spacer by heating.

18. The method for manufacturing a semiconductor light-emitting device according to claim 17, wherein providing includes at least one of providing the optical lens with an inner corner surface having a plurality of convex portions, and providing the reflector with the top surface that includes a plurality of convex portions.

19. The method for manufacturing a semiconductor light-emitting device according to claim 17, wherein the encapsulating resin is at least one of a transparent resin and a mixture resin, and the mixture resin includes a resin mixed with at least one of a diffuser, a wavelength conversion material, and a pigment configured to selectively absorb light having a predetermined wavelength.

20. The method for manufacturing a semiconductor light-emitting device according to claim 18, wherein the encapsulating resin is at least one of a transparent resin and a mixture resin, and the mixture resin includes a resin mixed with at least one of a diffuser, a wavelength conversion material, and a pigment configured to selectively absorb light having a predetermined wavelength.

21. The method for manufacturing a semiconductor light-emitting device according to claim 18, wherein the plurality of convex portions are formed at substantially equal intervals with a width between substantially 0.1 mm and 2.0 mm and a height between substantially 0.1 mm and 2.0 mm, the width and height being measured in a plane that is substantially perpendicular to an optical axis of the device.

22. The method for manufacturing a semiconductor light-emitting device according to claim 19, wherein the plurality of convex portions are formed at substantially equal intervals with a width between substantially 0.1 mm and 2.0 mm and a height between substantially 0.1 mm and 2.0 mm, the width and height being measured in a plane that is substantially perpendicular to an optical axis of the device.

23. The method for manufacturing a semiconductor light-emitting device according to claim 20, wherein the plurality of convex portions are formed at substantially equal intervals with a width between substantially 0.1 mm and 2.0 mm and a height between substantially 0.1 mm and 2.0 mm, the width and height being measured in a plane that is substantially perpendicular to an optical axis of the device.

24. The method for manufacturing a semiconductor light-emitting device according to claim 18, wherein the spacer is composed of the same material as the encapsulating resin.

25. The method for manufacturing a semiconductor light-emitting device according to claim 19, wherein the spacer is composed of the same material as the encapsulating resin.

26. The method for manufacturing a semiconductor light-emitting device according to claim 20, wherein the spacer is composed of the same material as the encapsulating resin.

27. The method for manufacturing a semiconductor light-emitting device according to claim 21, wherein the spacer is composed of the same material as the encapsulating resin.

28. The method for manufacturing a semiconductor light-emitting device according to claim 22, wherein the spacer is composed of the same material as the encapsulating resin.

29. The method for manufacturing a semiconductor light-emitting device according to claim 23, wherein the spacer is composed of the same material as the encapsulating resin.

30. The semiconductor light-emitting device according to claim 1, wherein the reflector is tubular in shape and encloses the at least one semiconductor light-emitting chip.

31. The semiconductor light-emitting device according to claim 3, wherein the wavelength conversion material is a phosphor.

34. The method for manufacturing a semiconductor light-emitting device according to claim 17, wherein the reflector is tubular in shape.

35. The method for manufacturing a semiconductor light-emitting device according to claim 19, wherein the wavelength conversion material is a phosphor.

36. The method for manufacturing a semiconductor light-emitting device according to claim 20, wherein the wavelength conversion material is a phosphor.

37. The method for manufacturing a semiconductor light-emitting device according to claim 17, wherein the providing, filling, disposing a spacer, disposing the optical lens, and solidifying both the encapsulating resin and the spacer are accomplished sequentially.

2. A semiconductor light-emitting device comprising:

a base board having at least one pair of chip mounting portions;

at least one semiconductor light-emitting chip located adjacent the base board and configured to emit light along an optical axis of the device;

a reflector including a top surface that has a plurality of convex portions, the reflector including a bottom surface located adjacent the base board so as to enclose the at least one semiconductor light-emitting chip, the reflector also including an inner side surface configured to reflect light from the at least one semiconductor light emitting chip during operation of the at least one semiconductor light emitting chip, an outer peripheral side surface facing away from and opposed to the inner side surface, and the top surface being located between the inner side surface and the outer peripheral side surface, the outer peripheral side surface being an outermost peripheral surface of the reflector in a radial direction away from the optical axis of the device;

an encapsulating resin disposed in the reflector;

an optical lens having a concave-shaped cavity contacting the plurality of convex portions of the reflector while facing the top surface of the reflector, the optical lens made from a material having a first softness; and

a spacer composed of a transparent resin that has a second softness that is softer than the first softness of the material of the optical lens, the spacer being located between the concave-shaped cavity of the optical lens and the top surface of the reflector, including spaces between each of the plurality of convex portions of the reflector, the spacer extending along the top surface of the reflector and extending downward towards the base board and along at least a portion of the outer peripheral side surface, wherein each of the plurality of convex portions and the spaces between the plurality of convex portions include a width, and a cumulative width of each of the spaces is greater than a cumulative width of each of the plurality of convex portions.

4. The semiconductor light-emitting device according to claim 2, wherein the encapsulating resin is at least one of a transparent resin and a mixture resin, and the mixture resin includes a resin mixed with at least one of a diffuser, a wavelength conversion material, and a pigment configured to selectively absorb light having a predetermined wavelength.

6. The semiconductor light-emitting device according to claim 2, wherein the plurality of convex portions of the optical lens are formed at substantially equal intervals with a width between substantially 0.1 mm and 2.0 mm and a height between substantially 0.1 mm and 2.0 mm, the width and height being measured in a plane that is substantially perpendicular to an optical axis of the device.

8. The semiconductor light-emitting device according to claim 4, wherein the plurality of convex portions of the optical lens are formed at substantially equal intervals with a width between substantially 0.1 mm and 2.0 mm and a height between substantially 0.1 mm and 2.0 mm, the width and height being measured in a plane that is substantially perpendicular to an optical axis of the device.

10. The semiconductor light-emitting device according to claim 2, wherein the spacer is composed of the same material as the encapsulating resin.

12. The semiconductor light-emitting device according to claim 4, wherein the spacer is composed of the same material as the encapsulating resin.

14. The semiconductor light-emitting device according to claim 6, wherein the spacer is composed of the same material as the encapsulating resin.

16. The semiconductor light-emitting device according to claim 8, wherein the spacer is composed of the same material as the encapsulating resin.

32. The semiconductor light-emitting device according to claim 2, wherein the reflector is tubular in shape.

33. The semiconductor light-emitting device according to claim 4, wherein the wavelength conversion material is a phosphor.

38. A semiconductor light-emitting device comprising:

a base board having at least one pair of chip mounting portions;

at least one semiconductor light-emitting chip located adjacent the base board and configured to emit light along an optical axis of the device;

a reflector located adjacent the base board and the at least one semiconductor light-emitting chip, the reflector including an inner side surface configured to reflect light from the at least one semiconductor light emitting chip during operation of the at least one semiconductor light emitting chip, an outer peripheral side surface facing away from and opposed to the inner side surface, and a top surface located between the inner side surface and the outer peripheral side surface, the outer peripheral side surface being an outermost peripheral surface of the reflector in a radial direction away from the optical axis of the device;

an encapsulating resin disposed adjacent the reflector;

an optical lens having a concave-shaped cavity and being composed of a material having a first softness; and

a spacer composed of a transparent resin that has a second softness that is softer than the first softness of the material of the optical lens, the spacer being located between the concave-shaped cavity of the optical lens and the reflector, the spacer extending along the top surface of the reflector and extending downward towards the base board and along at least a portion of the outer peripheral side surface,

wherein at least one of the reflector and the optical lens includes a plurality of convex portions located about the concave shaped cavity of the optical lens, and the plurality of convex portions in combination with a surface of the optical lens and a surface of the reflector define a plurality of openings spaced about the concave shaped cavity and in which the transparent resin is located.