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Thin film light emitting diode

  • US 8,207,552 B2
  • Filed: 05/18/2011
  • Issued: 06/26/2012
  • Est. Priority Date: 06/26/2002
  • Status: Active Grant
First Claim
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1. A vertical topology light emitting device, comprising:

  • a conductive support structure;

    an adhesion structure comprising a first metallic layer on the conductive support structure and a second metallic layer on the first metallic layer;

    a semiconductor structure over the adhesion structure, the semiconductor structure having a first surface, a second surface and a side surface, wherein the semiconductor structure comprises a first-type semiconductor layer, a light emitting layer on the first-type semiconductor layer, and a second-type semiconductor layer on the light emitting layer;

    a reflective structure between the adhesion structure and the first surface of the semiconductor structure, the reflective structure also serving as a first electrode, wherein the reflective structure reflects the light from the semiconductor structure, and wherein the reflective structure comprises a reflective layer on the adhesion structure and a metal contact on the reflective layer;

    a second electrode on the second surface of the semiconductor structure, the second surface being opposite the first surface, wherein the second electrode comprises a first layer and a second layer on the first layer;

    a passivation layer on at least a portion of the second surface of the semiconductor structure; and

    a wavelength converting layer over the second surface of the semiconductor structure, wherein the passivation layer is at least partially disposed between the semiconductor structure and the wavelength converting layer.

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