Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device

• US 8,207,589 B2
• Filed: 02/12/2008
• Issued: 06/26/2012
• Est. Priority Date: 02/15/2007
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kusumoto, Naoto, Nishi, Kazuo, Sugawara, Yuusuke
• Primary Examiner(s): Maldonado, Julio J
• Assistant Examiner(s): Ligai, Maria
• Application Number:
  US12/068,849
• Publication Number:
  US 20080203515A1
• Time in Patent Office: 1,596 Days
• Field of Search: 257/233, 257/292, 257/433, 257/458, 257/444, 257/459, 257/E23.011, 257E23038-E23039, 438/68, 438/64
• US Class Current: 257/444
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 31/147 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
• CPC Class Codes: H01L 31/153 formed in, or on, a common substrate

Abstract

A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted.

Claims

1. A photoelectric conversion device comprising:

a photodiode receiving light and an amplifier circuit for amplifying output of the photodiode, which are provided on a surface of a substrate having an insulating surface;

a first insulating layer covering the photodiode and the amplifier circuit;

a second insulating layer covering a top surface and side surfaces of the first insulating layer;

first and second output terminals formed over the second insulating layer, the first output terminal being electrically connected to the photodiode and the second output terminal being electrically connected to the amplifier circuit; and

first and second connection electrodes covering the whole of top surfaces of the first and second output terminals, respectively,

wherein each of the first and second output terminals is a taper shape, and

wherein each of the first and second connection electrodes continuously extends from a top surface of the second insulating layer to a portion of a side surface of the substrate.

2. The photoelectric conversion device according to claim 1, wherein the photodiode has a structure in which a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer are stacked.

3. The photoelectric conversion device according to claim 1, wherein the amplifier circuit is a current mirror circuit.

4. The photoelectric conversion device according to claim 3, wherein the current mirror circuit is formed from thin film transistors.

5. An electronic device comprising the photoelectric conversion device according to claim 1.

6. The photoelectric conversion device according to claim 1, wherein an edge portion of the second insulating layer is cut away to slope cross section.

7. The photoelectric conversion device according to claim 1, wherein edge portions of the substrate and the second insulating layer are cut away to slope cross section continuously.

8. A photoelectric conversion device comprising:

a photodiode receiving light and an amplifier circuit for amplifying output of the photodiode, which are provided on an upper surface of a substrate having an insulating surface;

a first insulating layer covering the photodiode and the amplifier circuit;

a second insulating layer covering a top surface and side surfaces of the first insulating layer;

first and second output terminals formed over the second insulating layer, the first output terminal being electrically connected to the photodiode and the second output terminal being electrically connected to the amplifier circuit; and

first and second connection electrodes covering the whole of top surfaces of the first and second output terminals, respectively,

wherein the substrate has tapered portions sloping inward from portions of side surfaces to the upper surface,

wherein each of the first and second output terminals is a taper shape, and

wherein each of the first and second connection electrodes continuously extends from a top surface of the second insulating layer to ends of the tapered portions of the substrate.

9. The photoelectric conversion device according to claim 8, wherein the photodiode has a structure in which a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer are stacked.

10. The photoelectric conversion device according to claim 8, wherein the amplifier circuit is a current mirror circuit.

11. The photoelectric conversion device according to claim 10, wherein the current mirror circuit is formed from thin film transistors.

12. An electronic device comprising the photoelectric conversion device according to claim 8.

13. The photoelectric conversion device according to claim 8, wherein an edge portion of the second insulating layer is cut away to slope cross section.