High voltage and high power boost converter with co-packaged Schottky diode

• US 8,207,602 B2
• Filed: 05/20/2010
• Issued: 06/26/2012
• Est. Priority Date: 06/11/2007
• Status: Active Grant

• Current Assignee: Alpha & Omega Semiconductor, Ltd.
• Original Assignee: Alpha & Omega Semiconductor, Ltd.
• Inventors: Chang, Allen, Cheng, Wai-Keung Peter
• Primary Examiner(s): Zhang, Jue
• Application Number:
  US12/784,391
• Publication Number:
  US 20100225296A1
• Time in Patent Office: 768 Days
• Field of Search: 257/676, 257/777, 323/222, 323/282
• US Class Current: 257/676
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H02M 3/155 using semiconductor devices only
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad.

Claims

1. A boost converter comprising:

a boost converter integrated circuit; and

a vertical discrete Schottky diode having a top anode and a bottom cathode

wherein the boost converter integrated circuit and the vertical discrete Schottky diode are co-packaged on a common die pad, wherein the boost converter integrated circuit is electrically isolated from the common die pad and wherein a substrate of the boost converter integrated circuit is N-type and electrically connected to an output voltage.

2. The boost converter of claim 1, wherein the boost converter integrated circuit includes a controller and an N-type field effect transistor (NFET).

3. The boost converter of claim 2, wherein the controller and the N-type field effect transistor (NFET) are formed on a common semiconductor chip.

4. The boost converter of claim 2, wherein the top anode of the discrete Schottky diode is coupled to a drain of the NFET.

5. The boost converter of claim 1 wherein a substrate of the boost converter integrated circuit is P-type.

6. The boost converter of claim 5 wherein the substrate is electrically connected to a ground voltage.

7. The boost converter of claim 6 wherein the substrate is electrically isolated from the common die pad.

8. The boost converter of claim 6 wherein the substrate is electrically isolated from the common die pad with a non-conductive epoxy selected to withstand a full output voltage rating of the boost converter.