Semiconductor device

• US 8,208,260 B2
• Filed: 11/24/2010
• Issued: 06/26/2012
• Est. Priority Date: 09/26/2007
• Status: Active Grant

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Okumura, Keiji, Otsuka, Takukazu, Saito, Masao
• Primary Examiner(s): Datskovskiy, Michail V
• Application Number:
  US12/954,451
• Publication Number:
  US 20110069457A1
• Time in Patent Office: 580 Days
• Field of Search: 361/56, 361/65, 361/69, 361/115, 361/156, 36167946-67954, 361/688, 361/689, 361690-699, 361702-717, 361724-727, 257/686, 257690-692, 257/678, 257/698, 257/355, 257/356, 257/603, 257706-727, 165/80.2, 165/80.3, 165/80.4, 165/80.5, 165/104.33, 165/104.34, 165/185, 363/56, 363/69, 363/56.01, 363/56.02, 363/21.06, 363/21.14, 363 95- 98, 363/81, 363/84, 363/89, 363/126, 363/127, 363/108, 363/144, 363/234, 363/377, 363/147, 363 15- 17, 307/43, 307/52, 307/53, 307/60, 307/67, 307/59, 307/82, 298/900.32, 298/900.45, 298/952.12, 298/880.45, 298/900.3, 297/26, 297/265, 622/592
• US Class Current: 361/715
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 25/162 the devices being mounted on two or more different substrates
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/30107 Inductance
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H05K 1/14 Structural association of two or more printed circuits providing electric connection to or between printed circuits H05K1/11, H01R12/00
• CPC Class Codes: H05K 7/02 Arrangements of circuit components or wiring on supporting structure
• CPC Class Codes: H05K 7/20509 Multiple-component heat spreaders; Multi-component heat-conducting support plates; Multi-component non-closed heat-conducting structures

Abstract

A semiconductor device includes: a first output unit configured to output a first phase; a second output unit configured to output a second phase different from the first phase, the second output unit being disposed to be stacked on the first output unit; and a controller configured to control the output units.

Claims

1. A semiconductor device comprising:

a first output unit configured to output a first phase;

a second output unit disposed to be stacked on the first output unit and configured to output a second phase different from the first phase; and

a controller configured to control the output units,

wherein;

the output unit further includes a high voltage unit and a low voltage unit which is supplied with power having a voltage lower than that applied to the high voltage unit,

the high voltage unit and the low voltage unit are stacked,

the first and second output units are provided upright on the controller,

each of the first and second output units further includes a radiator plate for conducting heat in a direction different from a direction in which the controller is disposed,

the radiator plate is formed of a thermally conductive anisotropic material having a higher thermal conductivity in a first direction perpendicular to the radiator plate than a second direction in which the controller is arranged, the first direction being different from the second direction, and

the thermally conductive anisotropic material has aligned carbon fibers buried in aluminum.

2. The semiconductor device according to claim 1, wherein

a peripheral portion of the radiator plate is bonded with an adhesive to a lower surface of a case,

the case is made of synthetic resin and in the form of a rectangular plate,

a window is in a center portion of the case,

a wiring board is fitted into the window,

a concave portion slightly larger than the window is in the case,

the concave portion is filled with a protection gel to protect and insulate the high voltage unit and the low voltage unit, and

the protection gel is made of a soft silicon resin or an epoxy resin.

3. The semiconductor device according to claim 2, wherein the protection gel has a resistance to heat at a temperature of about 180°

C.

4. The semiconductor device according to claim 3, wherein an upper surface of the protection gel is covered with a cover to prevent leak of the protection gel and to suppress heat conduction to the high voltage unit and the low voltage unit.

5. A semiconductor device comprising:

a first output unit configured to output a first phase;

a second output unit disposed to be stacked on the first output unit and configured to output a second phase different from the first phase; and

a controller configured to control the output units,

wherein;

the output units further include a plurality of semiconductor elements and a wiring board having the semiconductor elements provided thereon,

the plurality of semiconductor elements are disposed on both sides of the board,

the first and second output units are provided upright on the controller,

the first and second output units further include control bus bars for connection to the controller,

the control bus bars are inserted into holes formed in the controller, and

each of the first and second output units further includes a radiator plate for conducting heat in a direction different from a direction in which the controller is disposed,

the radiator plate is formed of a thermally conductive anisotropic material having a higher thermal conductivity in a first direction perpendicular to the radiator plate than a second direction in which the controller is arranged, the first direction being different from the second direction, and

the thermally conductive anisotropic material is one having aligned carbon fibers buried in aluminum.

6. The semiconductor device according to claim 5, wherein

a peripheral portion of the radiator plate is bonded with an adhesive to a lower surface of a case,

the case is made of synthetic resin in the form of a rectangular plate,

a window is in a center portion of the case,

a wiring board is fitted into the window,

a concave portion slightly larger than the window is in the case,

the concave portion is filled with a protection gel to protect and insulate the high voltage unit and the low voltage unit, and

the protection gel is made of a soft silicon resin or an epoxy resin.

7. The semiconductor device according to claim 6, wherein the protection gel has a resistance to heat of about 180°

C.

8. The semiconductor device according to claim 5, wherein an upper surface of the protection gel is covered with a cover to prevent leak of the protection gel and to suppress heat conduction to the high voltage unit and the low voltage unit.

9. The semiconductor device according to claim 5, wherein

the high voltage unit and the low voltage unit include semiconductor elements, and

the high voltage unit and the low voltage unit are stacked so that the semiconductor elements thereof face each other.