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Vertically stacked field programmable nonvolatile memory and method of fabrication

  • US 8,208,282 B2
  • Filed: 10/07/2010
  • Issued: 06/26/2012
  • Est. Priority Date: 11/16/1998
  • Status: Expired due to Fees
First Claim
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1. A memory cell comprising:

  • a first conductor;

    a second conductor;

    a steering element that is capable of providing substantially unidirectional current flow; and

    a state change element coupled in series with the steering element, wherein the state change element is capable of retaining a programmed state, and wherein the steering element and state change element are vertically aligned with one another.

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