Surface emitting laser, surface emitting laser array, optical scanning device, image forming apparatus, optical transmission module and optical transmission system

• US 8,208,511 B2
• Filed: 11/13/2008
• Issued: 06/26/2012
• Est. Priority Date: 11/14/2007
• Status: Active Grant

• Current Assignee: Ricoh Company Limited
• Original Assignee: Ricoh Company Limited
• Inventors: Sato, Shunichi, Itoh, Akihiro, Hino, Takeshi, Jikutani, Naoto
• Primary Examiner(s): Stafford, Patrick
• Application Number:
  US12/669,090
• Publication Number:
  US 20100189467A1
• Time in Patent Office: 1,321 Days
• Field of Search: 372/46.013, 372/50.11, 372/50.124
• US Class Current: 372/46.013
• CPC Class Codes: B41J 2/45 using light-emitting diode [LED] or laser arrays
• CPC Class Codes: H01S 5/0021 Degradation or life time measurements
• CPC Class Codes: H01S 5/18313 by oxidizing at least one of the DBR layers
• CPC Class Codes: H01S 5/18358 containing spacer layers to adjust the phase of the light wave in the cavity
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

A disclosed surface emitting laser is capable of being manufactured easily, having a higher yield and a longer service lifetime. In the surface emitting laser, a selectively-oxidized layer is included as a part of a low refractive index layer of an upper semiconductor distribution Bragg reflector; the low refractive index layer including the selectively-oxidized layer includes two intermediate layers adjoining the selectively-oxidized layer and two low refractive index layers adjoining the intermediate layers. Al content rate in the intermediate layers is lower than that in the selectively-oxidized layer, and Al content rate in the low refractive index layers is lower than that in the selectively-oxidized layer. This configuration enables providing more control over the thickness and oxidation rate of the oxidized layer, thereby enabling reducing the variation of the thickness of the oxidized layer.

Claims

1. A surface emitting laser comprising:

an oscillator structure including an active layer;

semiconductor distribution Bragg reflectors each including plural pairs of a low refractive index layer and a high refractive index layer, the semiconductor distribution Bragg reflectors sandwiching the oscillator structure; and

a confined structure formed of a selectively-oxidized layer including aluminum, wherein

the selectively-oxidized layer is included as a part of the low refractive index layer of the semiconductor distribution Bragg reflector;

the low refractive index layer including the selectively-oxidized layer includes first and second layers, the first layer being in contact with at least one side of the selectively-oxidized layer, the second layer being in contact with the first layer; and

Al content rate in the first layer is lower than the Al content rate in the selectively-oxidized layer and is greater than the Al content rate in the second layer.

2. The surface emitting laser according to claim 1, wherein

the confined structure includes a current passage region and an oxidized layer surrounding the current passage region, and

the oxidized layer includes an oxide formed by oxidizing a part of the selectively-oxidized layer and an oxide formed by oxidizing a part of the first layer.

3. The surface emitting laser according to claim 1, wherein a total thickness of the selectively-oxidized layer and the first layer is equal to or less than 110 nm.

4. The surface emitting as according to claim 3, wherein a maximum thickness of the oxidized layer is equal to or less than 110 nm.

5. The surface emitting laser according to claim 1, wherein

an optical thickness of the low refractive index layer including the selectively-oxidized layer is expressed by the following formula:

(2n+1)λ

/4N

where;

“

n”

denotes an integer equal to or greater than 1, “

λ

”

denotes an oscillation wavelength, and “

N”

denotes a refractive index of the layer.

6. The surface emitting laser according to claim 1, wherein a difference between Al content rate of the selectively-oxidized layer and Al content rate of the first layer is equal to or more than 5% and is equal to or less than 20%.

7. The surface emitting laser according to claim 1, wherein a difference between Al content rate of the selectively-oxidized layer and the Al content rate of the second layer is more than 20%.

17. A surface emitting laser array in which plural of the surface emitting lasers according to claim 1 are integrated.

18. An image forming apparatus comprising:

an image carrier; and

an optical scanning device scanning a light including image information onto the image carrier, the optical scanning device including;

a light source including the surface emitting laser array according to claim 17;

a deflector deflecting a light from the light source; and

a scanning optical system focusing the light deflected by the deflector on the scanning surface.

19. An optical transmission module generating an optical signal in accordance with an input signal, the optical transmission module comprising:

the surface emitting laser array according to claim 17; and

a driving unit driving the surface emitting laser array in accordance with an input electronic signal.

20. An optical transmission system comprising:

the optical transmission module according to claim 18;

an optical medium through which an optical signal generated by the optical transmission module is transmitted; and

a converter converting the optical signal transmitted through the optical medium into an electronic signal.

8. A surface emitting laser emitting a light in the direction perpendicular to its substrate, the surface emitting laser comprising:

an oscillator structure including an active layer;

semiconductor distribution Bragg reflectors each including plural pairs of a low refractive index layer and a high refractive index layer, the semiconductor distribution Bragg reflectors sandwiching the oscillator structure; and

a current confined structure in which a current passage region is surrounded by an oxidized layer, the current confined structure being formed in the semiconductor distribution Bragg reflector by selectively oxidizing aluminum, wherein

the oxidized layer includes first and second boundary surfaces, the first boundary surface is provided at one side closer to the active layer, and the second boundary surface is provided on the other side,

a thickness of the oxidized layer gradually decreases as the distance to the current passage region decreases, and

the second boundary surface is more inclined than the first boundary surface with respect to a virtual surface perpendicular to a laser light emitting direction.

9. The surface emitting laser according to claim 8, wherein

the semiconductor distribution Bragg reflector includes a selectively-oxidized layer, a first layer and a second layer,

the center of the selectively-oxidized layer with respect to its thickness direction is disposed at a position corresponding to a node position of the standing wave distribution of the electric field of an oscillation light,

the first layer adjoins one side of the selectively-oxidized layer, the one side being closer to the active layer,

the second layer adjoins the other side of the selectively-oxidized layer,

Al content rate in each of the first and second layers is less than the Al content rate in the selectively-oxidized layer,

the Al content rate in the first layer is less than the Al content rate in the second layer, and

the oxidized layer includes Al oxide in the selectively-oxidized layer and Al oxide in the second layer.

10. The surface emitting laser according to claim 9, wherein the selectively-oxidized layer, the first layer, and the second layer are included as a part of one of the low refractive index layers of the semiconductor distribution Bragg reflector.

11. The surface emitting according to claim 10, wherein the Al content rate of the first layer is less than the Al content rate in each of the low refractive index layers excluding the low refractive index layer including the selectively-oxidized layer.

12. The surface emitting laser according to claim 8, wherein

the semiconductor distribution Bragg reflector includes a selectively-oxidized layer, a first layer and a second layer,

the center of the selectively-oxidized layer with respect to its thickness direction is disposed at a position corresponding to a node position of the standing wave distribution of the electric field of an oscillation light,

the first layer adjoins one side of the selectively-oxidized layer, the one side being closer to the active layer,

the second layer adjoins the other side of the selectively-oxidized layer,

Al content rates in of the first and second layers are substantially equal to each other and are less than the Al content rate in the selectively-oxidized layer,

the thickness of the second layer is greater than the thickness of the first layer, and

the oxidized layer includes Al oxide of the selectively-oxidized layer and Al oxide of the second layer.

13. The surface emitting laser according to claim 9, wherein

the semiconductor distribution Bragg reflector further includes a third layer adjoining the second layer,

the Al content rate in the third layer is less than the Al content rate in the second layer.

14. The surface emitting laser according to claim 13, wherein the selectively-oxidized layer, the first layer, the second layer, and the third layer are included as a part of one of the low refractive index layers of the semiconductor distribution Bragg reflector.

15. The surface emitting laser according to claim 14, wherein the Al content rate of the third layer is less than the Al content rate in each of the low refractive index layers excluding the low refractive index layer including the selectively-oxidized layer.

16. The surface emitting laser according to claim 9, wherein an optical thickness of the low refractive index layer including the selectively-oxidized layer is expressed by the following formula:

(2n+1)λ

/4N

where;

“

n”

denotes an integer equal to or greater than 1, “

λ

”

denotes an oscillation wavelength, and “

N”

denotes a refractive index of the layer.