Single phase fluid imprint lithography method

• US 8,211,214 B2
• Filed: 02/05/2008
• Issued: 07/03/2012
• Est. Priority Date: 10/02/2003
• Status: Active Grant

• Current Assignee: Mii Newco, Inc. (Canon Inc.), Board of Regents of the University of Texas System (University of Texas System)
• Original Assignee: Molecular Imprints, Inc. (Canon Inc.), Board of Regents of the University of Texas System (University of Texas System)
• Inventors: Xu, Frank Y., Khusnatdinov, Niyaz
• Primary Examiner(s): Ahmed, Shamim
• Application Number:
  US12/026,022
• Publication Number:
  US 20080141862A1
• Time in Patent Office: 1,610 Days
• Field of Search: 952/41, 952/46, 427/258, 216/9, 216/52, 264/85, 264/102
• US Class Current: 95/246
• CPC Class Codes: B01D 19/0005 with one or more auxiliary substances
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Abstract

The present invention is directed toward a method for reducing pattern distortions in imprinting layers by reducing gas pockets present in a layer of viscous liquid deposited on a substrate. To that end, the method includes varying a transport of the gases disposed proximate to the viscous liquid. Specifically, the atmosphere proximate to the substrate wherein a pattern is to be recorded is saturated with gases that are either highly soluble, highly diffusive, or both with respect to either the viscous liquid, the substrate, the template, or a combination thereof. Additionally, or in lieu of saturating the atmosphere, the pressure of the atmosphere may be reduced.

Claims

1. In an imprint lithography system, a method for reducing gases trapped in viscous liquid positioned on a substrate, said method comprising:

providing a substrate having a viscous liquid thereon;

placing a mold assembly in close proximity with said viscous liquid, thereby defining a processing region proximate to said substrate, said processing region having an atmosphere associated therewith; and

varying characteristics of said atmosphere to increase a transport of gases in said atmosphere, with said transport of said gases being through either said mold assembly, said substrate, or a combination thereof.

2. The method as recited in claim 1 wherein varying further includes increasing a solubility of said atmosphere in said substrate, said mold assembly, or a combination thereof.

3. The method as recited in claim 1 wherein varying further includes increasing a diffusion of said atmosphere in said mold assembly, said substrate, or a combination thereof.

4. The method as recited in claim 1 wherein varying further includes introducing, into said atmosphere, a gas selected from a set of gasses consisting of carbon dioxide and helium.

5. The method as recited in claim 4 further including reducing a pressure of said atmosphere.

6. The method as recited in claim 1 further including forming, from said viscous liquid, a solidified patterned layer.

7. In an imprint lithography system, a method for reducing gases trapped in a layer of viscous liquid positioned on a substrate, said method comprising:

placing a mold assembly in close proximity with said substrate, defining a processing region therebetween having an atmosphere associated therewith;

introducing a fluid into said atmosphere to increase a transport of said gases through either said mold assembly, said substrate, or a combination thereof; and

reducing a pressure of said processing region by applying a vacuum to said processing region.

8. The method as recited in claim 7 wherein introducing further includes increasing a solubility of said atmosphere in said substrate, said mold assembly, or a combination thereof.

9. The method as recited in claim 7 wherein introducing further includes increasing diffusion of said atmosphere in said substrate, said mold assembly, or a combination thereof.

10. In an imprint lithography system, a method for reducing gases trapped in a layer of viscous liquid deposited on a substrate, said method comprising:

varying a composition of gases proximate to said viscous liquid to increase transport of said gases through either said substrate, a mold assembly spaced-apart from said substrate, or a combination thereof.

11. The method as recited in claim 10 wherein varying further includes controlling an atmosphere proximate to said substrate by introducing a fluid, therein, saturated with said viscous liquid.

12. The method as recited in claim 10 further including reducing a pressure of an atmosphere proximate to said substrate.

13. The method as recited in claim 10 wherein varying further includes introducing an additional gas selected from a set of gases consisting of carbon dioxide and helium.

14. The method as recited in claim 13 wherein additional gas is helium.

15. The method as recited in claim 10 wherein varying further includes saturating an atmosphere proximate to said viscous liquid with a helium gas.

16. The method as recited in claim 10 wherein varying further includes introducing into said gases, defining initial gases, an additional gas having a diffusivity in said mold assembly that is greater than a diffusivity of said initial gases in said viscous liquid.

17. In an imprint lithography system, a method for reducing gases trapped in an imprint layer formed on a substrate, said method comprising:

providing a substrate having imprint material deposited thereon;

placing a mold assembly in close proximity with said imprint material thereby defining a processing region proximate to said substrate, said processing region having an atmosphere associated therewith;

introducing helium gas into said atmosphere; and

solidifying the imprint material to form the imprint layer.

18. The method as recited in claim 17 wherein introducing the helium gas further includes saturating said atmosphere with helium gas.

19. The method of claim 17 wherein the imprint layer is patterned.

20. The method of claim 19 further comprising transferring the pattern of the imprint layer into the substrate.