Single phase fluid imprint lithography method
First Claim
1. In an imprint lithography system, a method for reducing gases trapped in viscous liquid positioned on a substrate, said method comprising:
- providing a substrate having a viscous liquid thereon;
placing a mold assembly in close proximity with said viscous liquid, thereby defining a processing region proximate to said substrate, said processing region having an atmosphere associated therewith; and
varying characteristics of said atmosphere to increase a transport of gases in said atmosphere, with said transport of said gases being through either said mold assembly, said substrate, or a combination thereof.
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Accused Products
Abstract
The present invention is directed toward a method for reducing pattern distortions in imprinting layers by reducing gas pockets present in a layer of viscous liquid deposited on a substrate. To that end, the method includes varying a transport of the gases disposed proximate to the viscous liquid. Specifically, the atmosphere proximate to the substrate wherein a pattern is to be recorded is saturated with gases that are either highly soluble, highly diffusive, or both with respect to either the viscous liquid, the substrate, the template, or a combination thereof. Additionally, or in lieu of saturating the atmosphere, the pressure of the atmosphere may be reduced.
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Citations
20 Claims
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1. In an imprint lithography system, a method for reducing gases trapped in viscous liquid positioned on a substrate, said method comprising:
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providing a substrate having a viscous liquid thereon; placing a mold assembly in close proximity with said viscous liquid, thereby defining a processing region proximate to said substrate, said processing region having an atmosphere associated therewith; and varying characteristics of said atmosphere to increase a transport of gases in said atmosphere, with said transport of said gases being through either said mold assembly, said substrate, or a combination thereof. - View Dependent Claims (2, 3, 4, 5, 6)
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7. In an imprint lithography system, a method for reducing gases trapped in a layer of viscous liquid positioned on a substrate, said method comprising:
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placing a mold assembly in close proximity with said substrate, defining a processing region therebetween having an atmosphere associated therewith; introducing a fluid into said atmosphere to increase a transport of said gases through either said mold assembly, said substrate, or a combination thereof; and reducing a pressure of said processing region by applying a vacuum to said processing region. - View Dependent Claims (8, 9)
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10. In an imprint lithography system, a method for reducing gases trapped in a layer of viscous liquid deposited on a substrate, said method comprising:
varying a composition of gases proximate to said viscous liquid to increase transport of said gases through either said substrate, a mold assembly spaced-apart from said substrate, or a combination thereof. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. In an imprint lithography system, a method for reducing gases trapped in an imprint layer formed on a substrate, said method comprising:
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providing a substrate having imprint material deposited thereon; placing a mold assembly in close proximity with said imprint material thereby defining a processing region proximate to said substrate, said processing region having an atmosphere associated therewith; introducing helium gas into said atmosphere; and solidifying the imprint material to form the imprint layer. - View Dependent Claims (18, 19, 20)
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Specification