Method of making transistor having metal gate
First Claim
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1. A method for forming a transistor having a metal gate, comprising:
- providing a substrate;
forming a transistor on the substrate, wherein the transistor comprises a high-k gate dielectric layer, an oxygen containing dielectric layer disposed on and directly contacting the high-k gate dielectric layer and a dummy gate disposed on the oxygen containing dielectric layer;
removing the dummy gate and the oxygen containing dielectric layer on the high-k gate dielectric layer; and
forming a metal gate, wherein the metal gate directly contacts the high-k gate dielectric layer.
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Abstract
A method for forming a transistor having a metal gate is provided. A substrate is provided first. A transistor is formed on the substrate. The transistor includes a high-k gate dielectric layer, an oxygen containing dielectric layer disposed on the high-k gate dielectric layer, and a dummy gate disposed on the oxygen containing dielectric layer. Then, the dummy gate and the patterned gate dielectric layer are removed. Lastly, a metal gate is formed and the metal gate directly contacts the high-k gate oxide.
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Citations
14 Claims
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1. A method for forming a transistor having a metal gate, comprising:
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providing a substrate; forming a transistor on the substrate, wherein the transistor comprises a high-k gate dielectric layer, an oxygen containing dielectric layer disposed on and directly contacting the high-k gate dielectric layer and a dummy gate disposed on the oxygen containing dielectric layer; removing the dummy gate and the oxygen containing dielectric layer on the high-k gate dielectric layer; and forming a metal gate, wherein the metal gate directly contacts the high-k gate dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification