Semiconductor manufacturing method
First Claim
1. A manufacturing method for semiconductor devices having a metal support, comprising:
- growing a semiconductor film on a growth substrate;
forming a metal support on a surface of said semiconductor film opposite to the growth substrate;
thereafter removing said growth substrate from the said semiconductor film;
forming a street groove reaching said metal support in the said semiconductor film;
radiating a first laser beam onto said metal support that has been exposed at a bottom of said street groove to form a first dividing groove having a substantially flat bottom in said metal support; and
radiating a second laser beam onto said bottom of the first dividing groove to form a second dividing groove penetrating through the metal support and having a width smaller than a width of the first dividing groove.
1 Assignment
0 Petitions
Accused Products
Abstract
A manufacturing method for semiconductor devices having a metal support is provided. The method in one aspect includes growing a semiconductor film on a growth substrate; forming a metal support on a surface of said semiconductor film opposite to the growth substrate; thereafter removing said growth substrate from said semiconductor film; forming a street groove reaching said metal support in the said semiconductor film; radiating a first laser beam onto said metal support to form a first dividing groove having a substantially flat bottom in said metal support; and radiating a second laser beam onto said metal support to form a second dividing groove that penetrates through a portion of said metal support that remains where the first dividing groove is formed.
28 Citations
16 Claims
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1. A manufacturing method for semiconductor devices having a metal support, comprising:
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growing a semiconductor film on a growth substrate; forming a metal support on a surface of said semiconductor film opposite to the growth substrate; thereafter removing said growth substrate from the said semiconductor film; forming a street groove reaching said metal support in the said semiconductor film; radiating a first laser beam onto said metal support that has been exposed at a bottom of said street groove to form a first dividing groove having a substantially flat bottom in said metal support; and radiating a second laser beam onto said bottom of the first dividing groove to form a second dividing groove penetrating through the metal support and having a width smaller than a width of the first dividing groove. - View Dependent Claims (2, 3, 4, 5, 12)
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6. A manufacturing method for semiconductor devices having a metal support, comprising:
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growing a semiconductor film on a growth substrate; forming a metal support on a surface of said semiconductor film opposite to the growth substrate; thereafter removing said growth substrate from said semiconductor film; forming a street groove reaching said metal support in the said semiconductor film; radiating a first laser beam onto a surface of said metal support from a side opposite to a side on said semiconductor film is formed to form a first dividing groove having a substantially flat bottom in said metal support; and radiating a second laser beam onto a surface of said metal support that has been exposed at a bottom of said street groove to form a second dividing groove reaching a bottom of the first dividing groove, thereby penetrating through said metal support. - View Dependent Claims (7, 8, 9, 10, 11)
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13. A manufacturing method for semiconductor devices having a metal support, comprising:
- growing a semiconductor film on a growth substrate;
forming a metal support on a surface of said semiconductor film opposite to the growth substrate;
thereafter removing said growth substrate from said semiconductor film;
forming a street groove reaching said metal support in the said semiconductor film;
radiating a first laser beam onto said metal support to form a first dividing groove having a substantially flat bottom in said metal support; and
radiating a second laser beam onto said metal support to form a second dividing groove that penetrates through a portion of said metal support that remains where the first dividing groove is formed. - View Dependent Claims (14, 15, 16)
- growing a semiconductor film on a growth substrate;
Specification