Amorphous oxide and field effect transistor
First Claim
Patent Images
1. An amorphous oxide comprising:
- In—
Ga—
Zn—
O with Mo added,wherein an atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower, andwherein an atomic composition ratio of In to a sum of In and Zn, In/(In+Zn), in the In—
Ga—
Zn—
O with Mo added is 30 atom % or higher and 80 atom % or lower.
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Abstract
An amorphous oxide at least includes: at least one element selected from the group consisting of In, Zn, and Sn; and Mo. An atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower.
126 Citations
21 Claims
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1. An amorphous oxide comprising:
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In—
Ga—
Zn—
O with Mo added,wherein an atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower, and wherein an atomic composition ratio of In to a sum of In and Zn, In/(In+Zn), in the In—
Ga—
Zn—
O with Mo added is 30 atom % or higher and 80 atom % or lower. - View Dependent Claims (2)
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3. An amorphous oxide comprising:
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In—
Ga—
Zn—
O with Mo added,wherein an atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower, and wherein an atomic composition ratio of Zn to the number of all metallic atoms in the amorphous oxide is 70 atom % or lower. - View Dependent Claims (21)
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4. A field effect transistor comprising:
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a drain electrode; a source electrode; a gate electrode; an active layer; and a gate insulating film, wherein said active layer comprises an amorphous oxide, wherein said amorphous oxide at least comprises; at least one element selected from the group consisting of In, Zn, and Sn; and Mo, wherein an atomic composition ratio of Mo to a number of all metallic atoms in said amorphous oxide is 0.1 atom % or higher and 5 atom % or lower. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An amorphous oxide comprising:
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at least one element selected from the group consisting of In, Zn, and Sn; and Mo, wherein an atomic composition ratio of Mo to a number of all metallic atoms in said amorphous oxide is 0.1 atom % or higher and 5 atom % or lower, wherein a film comprising said amorphous oxide is a semiconductor film, and wherein said semiconductor film has an electrical resistivity of 1 Ω
cm to 100 kΩ
cm. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification