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Amorphous oxide and field effect transistor

  • US 8,212,248 B2
  • Filed: 12/25/2008
  • Issued: 07/03/2012
  • Est. Priority Date: 01/08/2008
  • Status: Active Grant
First Claim
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1. An amorphous oxide comprising:

  • In—

    Ga—

    Zn—

    O with Mo added,wherein an atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower, andwherein an atomic composition ratio of In to a sum of In and Zn, In/(In+Zn), in the In—

    Ga—

    Zn—

    O with Mo added is 30 atom % or higher and 80 atom % or lower.

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