Light-emitting device
First Claim
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1. A light-emitting device having a light-emitting element comprising first and second electrodes and a light-emitting layer existing between the first and second electrodes, and a field effect transistor for driving the light-emitting element, wherein an active layer of the field effect transistor comprises an amorphous oxide of a compound having(a) a composition when in crystalline state represented by In2−
- xM3xO3(Zn1−
yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
0≦
y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;
(b) an electron carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3 wherein a current between a drain terminal and a source terminal of the field effect transistor when no gate voltage is applied is less than 10 microamperes; and
(c) oxygen defect density decreased by treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of the active layer of the amorphous oxide.
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Abstract
An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.
44 Citations
54 Claims
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1. A light-emitting device having a light-emitting element comprising first and second electrodes and a light-emitting layer existing between the first and second electrodes, and a field effect transistor for driving the light-emitting element, wherein an active layer of the field effect transistor comprises an amorphous oxide of a compound having
(a) a composition when in crystalline state represented by In2− - xM3xO3(Zn1−
yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
0≦
y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;(b) an electron carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3 wherein a current between a drain terminal and a source terminal of the field effect transistor when no gate voltage is applied is less than 10 microamperes; and (c) oxygen defect density decreased by treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of the active layer of the amorphous oxide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 20)
- xM3xO3(Zn1−
-
19. A light-emitting device having a light-emitting element comprising first and second electrodes and a light-emitting layer existing between the first and second electrodes, and a field effect transistor for driving the light-emitting element, wherein an active layer of the field effect transistor comprises a transparent amorphous-oxide semiconductor having
(a) a composition when in crystalline state represented by In2− - xM3xO3(Zn1−
yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
0≦
y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;(b) an electron carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein the amorphous oxide semiconductor is capable of realizing a normally off state such that a current between a drain terminal and a source terminal of the field effect transistor when no gate voltage is applied is less than 10 microamperes; and (c) oxygen defect density decreased by treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of the active layer of the amorphous oxide. - View Dependent Claims (21, 22, 23, 24, 26)
- xM3xO3(Zn1−
-
25. An active matrix display device comprising pixel circuits arranged into a two-dimensional matrix form, each of the pixel circuits comprising:
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a light-emitting element comprising first and second electrodes and a light-emitting layer existing between the first and second electrodes; and a field effect transistor for driving the light-emitting element, wherein an active layer of the field effect transistor includes such a transparent amorphous-oxide semiconductor having (a) a composition when in crystalline state represented by In2−
xM3xO3(Zn1−
yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
0≦
y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;(b) an electron carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein the amorphous oxide semiconductor is capable of realizing a normally off state such that a current between a drain terminal and a source terminal of the field effect transistor when no gate voltage is applied is less than 10 microamperes; and (c) oxygen defect density decreased by treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of the active layer of the amorphous oxide. - View Dependent Claims (27, 28, 29, 30)
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31. A display article comprising:
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a light-emitting element comprising first and second electrodes and a light-emitting layer existing between the first and second electrodes and a field effect transistor for driving the light-emitting element, wherein an active layer of the field effect transistor includes an amorphous oxide semiconductor having (a) a composition when in crystalline state represented by In2−
xM3xO3(Zn1−
yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
0≦
y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;(b) an electron carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein a current between a drain terminal and a source terminal of the field effect transistor when no gate voltage is applied is less than 10 microamperes; and (c) oxygen defect density decreased by treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of the active layer of the amorphous oxide. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38)
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39. A light-emitting device having a light-emitting element comprising first and second electrodes and a light-emitting layer existing between the first and second electrodes, and a field effect transistor for driving the light-emitting element, wherein an active layer of the field effect transistor comprises an amorphous-oxide of a compound having
(a) a composition selected from an oxide containing In, Ga, and Zn, an oxide containing In, Zn, and Sn, an oxide containing In and Sn, and an oxide containing In; -
(b) an electron carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3 wherein a current between a drain terminal and a source terminal of the field effect transistor when no gate voltage is applied is less than 10 microamperes; and (c) an oxygen defect density decreased by treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of the active layer of the amorphous oxide. - View Dependent Claims (40, 41, 42)
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43. A display article comprising:
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a light-emitting element comprising first and second electrodes and a light-emitting layer existing between the first and second electrodes and a field effect transistor for driving the light-emitting element, wherein an active layer of the field effect transistor comprises an amorphous oxide of a compound having (a) a composition selected from an oxide containing In, Ga, and Zn, an oxide containing In, Zn, and Sn, an oxide containing In and Sn, and an oxide containing In; (b) an electron carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein a current between a drain terminal and a source terminal of the field effect transistor when no gate voltage is applied is less than 10 microamperes; and (c) an oxygen defect density decreased by treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of the active layer of the amorphous oxide. - View Dependent Claims (44, 45, 46)
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47. A light-emitting device having a light-emitting element comprising first and second electrodes and a light-emitting layer existing between the first and second electrodes, and a field effect transistor for driving the light-emitting element, wherein an active layer of the field effect transistor comprises an amorphous oxide of a compound having
(a) a composition selected from an oxide containing In, Ga, and Zn, an oxide containing In, Zn, and Sn, an oxide containing In and Sn, and an oxide containing In; -
(b) an electron carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein the amorphous oxide semiconductor is capable of realizing a normally off state such that a current between a drain terminal and a source terminal of the field effect transistor when no gate voltage is applied is less than 10 microamperes; and (c) an oxygen defect density decreased by treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of the active layer of the amorphous oxide. - View Dependent Claims (48, 49, 50)
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51. An active matrix display device comprising pixel circuits arranged into a two-dimensional matrix form, each of the pixel circuits comprising:
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a light-emitting element comprising first and second electrodes; and a light-emitting layer existing between the first and second electrodes and a field effect transistor for driving the light-emitting element, wherein an active layer of the field effect transistor comprises an amorphous oxide of a compound having (a) a composition selected from an oxide containing In, Ga, and Zn, an oxide containing In, Zn, and Sn, an oxide containing In and Sn, and an oxide containing In; (b) an electron carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein the amorphous oxide semiconductor is capable of realizing a normally off state such that a current between a drain terminal and a source terminal of the field effect transistor when no gate voltage is applied is less than 10 microamperes; and (c) an oxygen defect density decreased by treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of the active layer of the amorphous oxide. - View Dependent Claims (52, 53, 54)
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Specification