Epitaxial wafer, light-emitting element, method of fabricating epitaxial wafer and method of fabricating light-emitting element
First Claim
1. An epitaxial wafer, comprising:
- a semiconductor substrate;
a light-emitting portion including an active layer provided between a first cladding layer of a first conductivity type and a second cladding layer of a second conductivity type different from the first conductivity type;
a reflective portion which is provided between the semiconductor substrate and the light-emitting portion and which reflects a light emitted from the active layer; and
a current dispersing layer provided on an opposite side of the reflective portion in relation to the light-emitting portion, and including first and second current dispersing layers having different carrier densities and impurity densities from each other,wherein the reflective portion includes plural pairs of layers each including a first semiconductor layer and a second semiconductor layer different from the first semiconductor layer,wherein the first semiconductor layer has a thickness of TA defined by Equation (1),
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Abstract
An epitaxial wafer, a light-emitting element, a method of fabricating the epitaxial wafer and a method of fabricating the light-emitting element, which have a high output and a low forward voltage, and can be fabricated without increasing fabricating cost, are provided. The epitaxial wafer is formed with a light-emitting portion, a reflective portion provided between a semiconductor substrate and the light-emitting portion and a current dispersing layer having first and second current dispersing layers, wherein the reflective portion has plural pairs of layers having first and second semiconductor layers wherein the first semiconductor layer has a thickness of TA defined by Equation (1),
the second semiconductor layer has a thickness of TB defined by Equation (2),
and the second current dispersing layer has a high carrier density or a high impurity density and is provided with the convexoconcave portion on the surface.
9 Citations
11 Claims
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1. An epitaxial wafer, comprising:
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a semiconductor substrate; a light-emitting portion including an active layer provided between a first cladding layer of a first conductivity type and a second cladding layer of a second conductivity type different from the first conductivity type; a reflective portion which is provided between the semiconductor substrate and the light-emitting portion and which reflects a light emitted from the active layer; and a current dispersing layer provided on an opposite side of the reflective portion in relation to the light-emitting portion, and including first and second current dispersing layers having different carrier densities and impurity densities from each other, wherein the reflective portion includes plural pairs of layers each including a first semiconductor layer and a second semiconductor layer different from the first semiconductor layer, wherein the first semiconductor layer has a thickness of TA defined by Equation (1), - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of fabricating an epitaxial wafer comprising:
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growing a reflective portion, formed on a semiconductor substrate, including plural pairs of layers having a first semiconductor layer and a second semiconductor layer different from the first semiconductor layer; growing a light-emitting portion, formed on the reflective portion, including an active layer provided between a first cladding layer of a first conductivity type and a second cladding layer of a second conductivity type which is different from the first conductivity type; growing a current dispersion layer, formed on the light-emitting portion, including first and second current dispersing layers which have different carrier densities or impurity densities each other; and forming a convexoconcave portion on a surface of the second current dispersing layer, wherein the first semiconductor layer has a thickness of TA defined by Equation (1),
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11. A method of fabricating a light-emitting element comprising:
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growing a reflective portion comprising plural pair of layers, formed on a semiconductor substrate, including a first semiconductor layer and a second semiconductor layer different from the first semiconductor layer; growing a light-emitting portion, formed on the reflective portion, including an active layer provided between a first cladding layer of a first conductivity type and a second cladding layer of a second conductivity type which is different from the first conductivity type; growing a current dispersion layer, formed on the light-emitting portion, including a first and second current dispersing layers which have different carrier densities or impurity densities each other; forming a convexoconcave portion on a surface of the second current dispersing layer; forming plural front surface electrodes on a surface of the second current dispersing layer after the forming step of the convexoconcave portion, and cutting each region among the plural front surface electrodes, wherein the first semiconductor layer has a thickness of TA defined by Equation (1),
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Specification