Integrated flow cell with semiconductor oxide tubing

• US 8,213,015 B2
• Filed: 09/25/2008
• Issued: 07/03/2012
• Est. Priority Date: 09/25/2008
• Status: Active Grant

• Current Assignee: Agilent Technologies, Inc.
• Original Assignee: Agilent Technologies, Inc.
• Inventors: Mueller, Beno, Beerling, Timothy, Kraizcek, Karsten
• Primary Examiner(s): Chowdhury, Tarifur
• Assistant Examiner(s): Lapage, Michael P
• Application Number:
  US12/237,398
• Publication Number:
  US 20100277722A1
• Time in Patent Office: 1,377 Days
• Field of Search: 356/244, 356/246, 356/436, 356/440, 356/73, 422/82.05, 422/82.09, 250428-438, 435/288.5, 73/36, 73/61, 73/69, 73/64, 73/43
• US Class Current: 356/440
• CPC Class Codes: B81B 2201/058 Microfluidics not provided for in B81B2201/051 - B81B2201/054
• CPC Class Codes: B81B 2203/0338 Channels
• CPC Class Codes: B81B 2203/0392 profiles not provided for in B81B2203/0376 - B81B2203/0384
• CPC Class Codes: B81C 1/00071 Channels
• CPC Class Codes: G01N 30/74 Optical detectors measurement of intensity, velocity, spectral content, polarisation, or phase of infrared, visible or ultraviolet light G01J
• CPC Class Codes: H01L 31/101 Devices sensitive to infrared, visible or ultraviolet radiation

Abstract

An integrated flow cell, the flow cell comprising a semiconductor substrate, and a fluidic conduit having an at least partially transparent semiconductor oxide tubing, wherein the semiconductor oxide tubing is formed with the semiconductor substrate.

Claims

1. An integrated flow cell, comprising:

a semiconductor substrate;

a fluidic conduit having an at least partially transparent semiconductor oxide tubing formed with the semiconductor substrate and comprising a semiconductor oxide to air transition providing total reflection along a measurement length within the fluidic conduit;

at least one window element coupling UV-Visible electromagnetic radiation into or out of the fluidic conduit;

an inlet for supplying a fluidic sample to the fluidic conduit; and

an outlet for draining the fluidic sample from the fluidic conduit.

2. The flow cell according to claim 1, comprising at least one of:

the semiconductor substrate is a silicon substrate and the semiconductor oxide tubing is a silicon oxide tubing;

the semiconductor substrate is a monocrystalline substrate;

the semiconductor oxide tubing is at least partially embedded in the semiconductor substrate;

the semiconductor oxide tubing has a rectangular cross section;

the semiconductor oxide tubing has a hexagonal cross section;

a surface of the semiconductor oxide tubing is lined with a reflection layer adapted so that a UV-Visible electromagnetic radiation beam propagating through the fluidic conduit is totally reflected at the reflection layer;

a surface of the semiconductor oxide tubing is lined with a reflection layer adapted so that a UV-Visible electromagnetic radiation beam propagating through the fluidic conduit is totally reflected at the reflection layer, wherein the reflection layer comprises polytetrafluoroethylene;

an outer surface of the semiconductor oxide tubing is lined with a reflection layer adapted so that a UV-Visible electromagnetic radiation beam propagating through the fluidic conduit is totally reflected at the reflection layer;

the flow cell comprises a plurality of independently operable fluidic conduits each delimited by a semiconductor oxide tubing connected to a common semiconductor substrate;

the flow cell is adapted to conduct a fluidic sample with a high pressure;

the flow cell is adapted to conduct a fluidic sample with a pressure of at least 50 bar, particularly of at least 100 bar, more particularly of at least 500 bar, still more particularly of at least 1000 bar;

the flow cell is adapted to conduct a liquid sample;

the flow cell is adapted as a microfluidic flow cell;

the flow cell is adapted as a nanofluidic flow cell;

the flow cell is a monolithically integrated flow cell, wherein the semiconductor oxide tubing is monolithically formed with the semiconductor substrate.

3. The flow cell according to claim 1, wherein the semiconductor oxide tubing has a tubular section and has a planar section, the tubular section delimiting the fluidic conduit and the planar section defining a beginning and an end of the fluidic conduit in the semiconductor substrate.

4. The flow cell according to claim 1, wherein the semiconductor oxide tubing is optically transparent.

5. The flow cell according to claim 1, wherein the semiconductor oxide tubing is adapted so that a UV-Visible electromagnetic radiation beam propagating through the fluidic conduit is totally reflected at the semiconductor oxide tubing.

6. The flow cell according to claim 1, comprising a UV-Visible electromagnetic radiation source adapted for generating a UV-Visible electromagnetic radiation beam and for coupling the UV-Visible electromagnetic radiation beam into the fluidic conduit.

7. The flow cell according to claim 6, comprising at least one of:

the UV-Visible electromagnetic radiation source is adapted for generating one of an optical light beam and an ultraviolet beam;

the flow cell comprises a UV-Visible electromagnetic radiation detector adapted for detecting the UV-Visible electromagnetic radiation beam after propagation through the fluidic conduit;

the flow cell comprises a UV-Visible electromagnetic radiation detector adapted for detecting the UV-Visible electromagnetic radiation beam after propagation through the fluidic conduit, wherein the UV-Visible electromagnetic radiation detector comprises one of an optical light detector, and an ultraviolet radiation detector.

8. The flow cell according to claim 7, wherein

the UV-Visible electromagnetic radiation detector is adapted for receiving the UV-Visible electromagnetic radiation beam from the fluidic conduit via the second window element.

9. The flow cell according to claim 6, comprising at least one of:

the flow cell comprises a first optical coupler element, particularly an optical fiber piece, arranged between the UV-Visible electromagnetic radiation source and the fluidic conduit to couple the UV-Visible electromagnetic radiation from the UV-Visible electromagnetic radiation source into the fluidic conduit;

the flow cell comprises a second optical coupler element, particularly a UV-Visible optical fiber piece, arranged between the fluidic conduit and a UV-Visible electromagnetic radiation detector to couple the UV-Visible electromagnetic radiation from the fluidic conduit into the UV-Visible electromagnetic radiation detector.

10. The flow cell according to claim 1, wherein the at least one window element comprises:

a first window element being transparent to UV-Visible electromagnetic radiation and being located at a first end portion of the fluidic conduit; and

a second window element being transparent to UV-Visible electromagnetic radiation and being located at a second end portion of the fluidic conduit opposing the first end portion.

11. The flow cell according to claim 10, wherein the UV-Visible electromagnetic radiation source is adapted for coupling the UV-Visible electromagnetic radiation beam into the fluidic conduit via the first window element.

12. The flow cell according to claim 1, wherein the inlet comprises:

a fluid supply hole formed in the semiconductor oxide tubing for supplying the fluidic sample to the fluidic conduit,

13. The flow cell according to claim 12, comprising at least one of:

the fluid supply hole is adapted for a fluidic connection to a processing element;

the fluid supply hole is also formed in the semiconductor substrate for supplying the fluidic sample to the fluidic conduit.

14. The flow cell according to claim 1, wherein the outlet comprises:

a fluid drain hole formed in the semiconductor oxide tubing for draining the fluidic sample from the fluidic conduit.

15. The flow cell according to claim 14, wherein

the fluid drain hole is also formed in the semiconductor substrate for draining the fluidic sample from the fluidic conduit.

16. A fluidic device for measuring a fluidic sample, the fluidic device comprising:

a processing unit adapted for processing the fluidic sample;

a flow cell according to claim 1 in fluid communication with the processing unit for receiving the processed fluidic sample from the processing unit.

17. The fluidic device according to claim 16, comprising at least one of:

the processing element is adapted for retaining the fluidic sample being a part of a mobile phase and for allowing other components of the mobile phase to pass the processing element;

the processing element comprises a separation column;

the processing element comprises a chromatographic column for separating components of the fluidic sample;

at least a part of the processing element is filled with a fluid separating material;

at least a part of the processing element is filled with a fluid separating material, wherein the fluid separating material comprises beads having a size in the range of 1 μ

m to 50 μ

m;

at least a part of the processing element is filled with a fluid separating material, wherein the fluid separating material comprises beads having pores having a size in the range of 0.02 μ

m to 0.03 μ

m;

the flow cell is arranged downstream of the processing unit;

the processing unit comprises a plurality of planar layers laminated to one another;

the processing unit comprising a microstructured body and porous material covering at least a portion of a surface of the microstructured body;

the fluidic device is adapted as a fluid separation system for separating compounds of the fluidic sample;

the fluidic device is adapted to analyze at least one physical, chemical and/or biological parameter of at least one compound of the fluidic sample;

the fluidic device comprises at least one of the group consisting of a sensor device, a test device for testing a device under test or a substance, a device for chemical, biological and/or pharmaceutical analysis, a capillary electrophoresis device, a liquid chromatography device, an HPLC device, a gas chromatography device, and a gel electrophoresis device.

18. A method of manufacturing an integrated flow cell, the method comprising:

providing a semiconductor substrate;

forming a fluidic conduit having an at least partially transparent semiconductor oxide tubing, wherein the semiconductor oxide tubing is formed with the semiconductor substrate and is formed with a semiconductor oxide to air transition providing total reflection along a measurement length within the fluidic conduit;

forming at least one window element coupling UV-Visible electromagnetic radiation into or out of the fluidic conduit;

forming an inlet for supplying a fluidic sample to the fluidic conduit; and

forming an outlet for draining the fluidic sample from the fluidic conduit.

19. The method according to claim 18, comprising at least one of:

the method comprises forming the semiconductor oxide tubing by converting a part of the semiconductor substrate from semiconductor material into semiconductor oxide material;

the method comprises forming the semiconductor oxide tubing by thermally annealing a surface of the semiconductor substrate;

the method comprises forming the semiconductor oxide tubing by deposition of semiconductor oxide material on a surface of the semiconductor substrate;

the method comprises patterning the semiconductor substrate before forming the semiconductor oxide tubing;

the method comprises patterning the semiconductor substrate by anisotropic etching of material of the semiconductor substrate before forming the semiconductor oxide tubing;

the method comprises patterning the semiconductor substrate by mechanically weakening a surface portion of the semiconductor substrate and subsequently removing the mechanically weakened surface portion;

the method comprises patterning the semiconductor substrate by mechanically weakening a surface portion of the semiconductor substrate and subsequently removing the mechanically weakened surface portion, wherein the surface portion of the semiconductor substrate is mechanically weakened by forming a comb-shaped structure in the surface portion and by subsequently oxidizing the comb-shaped structure;

the method comprises patterning the semiconductor substrate by anisotropic etching along a plane before forming the semiconductor oxide tubing to thereby form a trapezoidal recess in the semiconductor substrate;

the method comprises patterning the semiconductor substrate by anisotropic etching along a plane before forming the semiconductor oxide tubing to thereby form a trapezoidal recess in the semiconductor substrate, wherein the semiconductor substrate is patterned by the anisotropic etching along the plane so that slanted side walls of the trapezoidal recess correspond to a plane of the semiconductor substrate;

the method comprises forming the semiconductor oxide tubing in a recess of the semiconductor substrate formed by patterning the semiconductor substrate, and bonding two semiconductor substrates both having a semiconductor oxide tubing in a recess in such a manner that the recesses together form the fluidic conduit;

the method comprises forming the semiconductor oxide tubing in a recess of the semiconductor substrate formed by patterning the semiconductor substrate, and bonding two semiconductor substrates both having a semiconductor oxide tubing in a recess in such a manner that the recesses together form the fluidic conduit, further comprising selectively removing a part of the material of at least one of the two semiconductor substrates;

the method comprises forming the semiconductor oxide tubing in a recess of the semiconductor substrate formed by patterning the semiconductor substrate, and bonding two semiconductor substrates both having a semiconductor oxide tubing in a recess in such a manner that the recesses together form the fluidic conduit, further comprising selectively removing a part of the material of at least one of the two semiconductor substrates, wherein selectively removing the part of the material of the at least one of the two semiconductor substrates is performed by etching, particularly by wet etching;

the method comprises forming a cover structure covering an outer surface of the semiconductor oxide tubing, the cover structure having a refraction index being smaller than a refraction index of the semiconductor oxide tubing;

the semiconductor oxide is formed based on the semiconductor.