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Semiconductor memory device having improved local input/output line precharge scheme

  • US 8,213,248 B2
  • Filed: 03/04/2010
  • Issued: 07/03/2012
  • Est. Priority Date: 03/06/2009
  • Status: Active Grant
First Claim
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1. A data path circuit of a semiconductor memory device, the data path circuit comprising:

  • a bit line sense amplifier adapted to be driven by a first power supply voltage;

    a local input/output line sense amplifier;

    a column selecting unit adapted to operatively connect a pair of bit lines connected to the bit line sense amplifier and a pair of local input/output lines connected to the local input/output line sense amplifier in response to a column selection signal; and

    a local input/output line precharge unit adapted to precharge the pair of local input/output lines with a second power supply voltage different from the first power supply voltage during a period for which the column selection signal is in an inactive state.

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