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Plasma processing apparatus

  • US 8,216,420 B2
  • Filed: 06/06/2006
  • Issued: 07/10/2012
  • Est. Priority Date: 06/06/2005
  • Status: Active Grant
First Claim
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1. A plasma processing apparatus, comprising:

  • a processing chamber having a vacuum, a gas being supplied to said processing chamber;

    a support electrode provided inside said processing chamber and supporting a processing-target object;

    an introduction window disposed on an upper side of the processing chamber through which a μ

    -wave is introduced into the processing chamber;

    a cavity unit disposed above the introduction window such that a bottom surface thereof contacts the introduction window;

    a circular waveguide connected to an upper surface of the cavity unit and extending substantially vertically, the circular waveguide being configured to propagate the μ

    -wave into the cavity unit and toward the introduction window;

    a reflection suppressor coupled to the circular waveguide for suppressing a reflective wave propagated upward into the circular waveguide, the reflection suppressor comprising a chamber having a larger diameter than that of the circular waveguide;

    a tuning box disposed above and connected to said reflection suppressor; and

    two μ

    -wave waveguides connected to said tuning box and disposed such that each of the two p-wave waveguides have axes that are on a flat plane which is substantially parallel to said tuning box or perpendicular to an axis of said waveguide and are set with an angle of substantially 90°

    therebetween, said two μ

    -wave waveguides introducing said μ

    -waves which are set a phase difference therebetween of substantially 90°

    in respective electric fields from said two directions to said tuning box,wherein said tuning box superimposes said respective μ

    -wave and generates a circularly polarized wave in a predetermined mode that is propagated inside the circular waveguide toward the introduction window.

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