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Magnetic tunnel junction device

  • US 8,216,703 B2
  • Filed: 02/21/2008
  • Issued: 07/10/2012
  • Est. Priority Date: 02/21/2008
  • Status: Active Grant
First Claim
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1. A magnetic tunnel junction device, comprising:

  • a synthetic antiferromagnet (SAF) structure having at least first and second ferromagnetic (FM) layers separated by a coupling layer, wherein the first FM layer has first and second portions;

    a further FM layer containing Ta, Zr, Hf, Ti, Mg, Nb, V, Zn, Cr or a combination thereof and a FM material as an alloy, spaced apart from the coupling layer by at least the first portion of the first FM layer anda dielectric tunnel barrier proximate the second portion of the first FM layer.

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