Methods for etching doped oxides in the manufacture of microfeature devices

• US 8,216,911 B2
• Filed: 09/02/2010
• Issued: 07/10/2012
• Est. Priority Date: 09/01/2005
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Rana, Niraj
• Primary Examiner(s): Vu, David
• Assistant Examiner(s): Henry, Caleb
• Application Number:
  US12/875,036
• Publication Number:
  US 20100330768A1
• Time in Patent Office: 677 Days
• Field of Search: 438/724, 438/738, 438/744, 438/757, 257/E21.265, 257/E21.215, 257/E21.309, 216/97, 216/96, 216/103, 216/104
• US Class Current: 438/381
• CPC Class Codes: C09K 13/08 containing a fluorine compound
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• CPC Class Codes: H10B 12/033 the capacitor extending over the transistor

Abstract

Methods for selectively etching doped oxides in the manufacture of microfeature devices are disclosed herein. An embodiment of one such method for etching material on a microfeature workpiece includes providing a microfeature workpiece including a doped oxide layer and a nitride layer adjacent to the doped oxide layer. The method include selectively etching the doped oxide layer with an etchant comprising DI:HF and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250:1, and (b) an etch rate through PSG of greater than 9,000 Å/minute.

Claims

1. A method, comprising:

selectively etching a doped oxide layer on a microelectronic workpiece, wherein the doped oxide layer is adjacent to a nitride layer on the workpiece, and wherein the doped oxide layer is etched with an etchant including DI;

HF and one of the following acids;

HNO₃, HCl, H₂SO₄, or H₃PO₄,

wherein the etchant has a pH below about 2.0 and comprises (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250;

1, and (b) an etch rate through PSG of greater than 9,000 Å

/minute.

2. The method of claim 1 wherein selectively etching the doped oxide layer comprises etching the doped oxide layer with an etchant including DI:

HF;

HNO₃, the etchant having a ratio of DI to HF to HNO₃ of approximately 2;

1;

X to approximately 100;

1;

X, wherein X is a value from 0.0001 to 5.0.

3. The method of claim 1 wherein selectively etching the doped oxide layer comprises etching the doped oxide layer with an etchant including DI:

HF;

HNO₃, the etchant having a ratio of DI to HF to HNO₃ of approximately 2-30;

1;

0.5-3.0.

4. The method of claim 1 wherein selectively etching the doped oxide layer comprises etching the doped oxide layer with an etchant including DI:

HF;

HNO₃, the etchant having a ratio of DI to HF to HNO₃ of approximately 10;

1;

1.0-2.0.

5. The method of claim 1 wherein selectively etching the doped oxide layer comprises etching the doped oxide layer with an etchant including DI:

HF;

HCl, the etchant having a ratio of DI to HF to HCl of approximately 2;

1;

X to approximately 100;

1;

X, wherein X is a value from 0.0001 to 5.0.

6. The method of claim 1 wherein selectively etching the doped oxide layer comprises etching the doped oxide layer with an etchant including DI:

HF;

HCl, the etchant having a ratio of DI to HF to HCl of approximately 2-30;

1;

0.5-3.0.

7. The method of claim 1 wherein selectively etching the doped oxide layer comprises etching the doped oxide layer with an etchant including DI:

HF;

HCl, the etchant having a ratio of DI to HF to HCl of approximately 10;

1;

1.0-2.0.

8. The method of claim 1 wherein selectively etching the doped oxide layer comprises etching the doped oxide layer with an etchant including DI:

HF;

H₂SO₄, the etchant having a ratio of DI to HF to H₂SO₄ of approximately 2;

1;

X to approximately 100;

1;

X, wherein X is a value from 0.0001 to 5.0.

9. The method of claim 1 wherein selectively etching the doped oxide layer comprises etching the doped oxide layer with an etchant including DI:

HF;

H₂SO₄, the etchant having a ratio of DI to HF to H₂SO₄ of approximately 2-30;

1;

0.5-3.0.

10. The method of claim 1 wherein selectively etching the doped oxide layer comprises etching the doped oxide layer with an etchant including DI:

HF;

H₂SO₄, the etchant having a ratio of DI to HF to H₂SO₄ of approximately 10;

1;

1.0-2.0.

11. The method of claim 1 wherein selectively etching the doped oxide layer comprises etching the doped oxide layer with an etchant including DI:

HF;

H₃PO₄, the etchant having a ratio of DI to HF to H₃PO₄ of approximately 2;

1;

X to approximately 100;

1;

X, wherein X is a value from 0.0001 to 5.0.

12. The method of claim 1 wherein selectively etching the doped oxide layer comprises etching the doped oxide layer with an etchant including DI:

HF;

H₃PO₄, the etchant having a ratio of DI to HF to H₃PO₄ of approximately 2-30;

1;

0.5-3.0.

13. The method of claim 1 wherein selectively etching the doped oxide layer comprises etching the doped oxide layer with an etchant including DI:

HF;

H₃PO₄, the etchant having a ratio of DI to HF to H₃PO₄ of approximately 10;

1;

1.0-2.0.

14. The method of claim 1, further comprising:

depositing a first conductive layer over at least a portion of the doped oxide layer before selectively etching the doped oxide layer, the first conductive layer including TiN;

depositing a second conductive layer over at least a portion of the first conductive layer before selectively etching the doped oxide layer, the second conductive layer including polysilicon; and

wherein selectively etching the doped oxide layer includes using an etchant that etches up to and generally not into the first and second conductive layers.

15. A method, comprising:

depositing a doped oxide layer on a semiconductor substrate;

depositing a nitride material, a polysilicon material, and a TiN material on the substrate and adjacent to the doped oxide layer; and

removing all or substantially all of the doped oxide layer on the substrate with an etchant comprising DI;

HF;

HNO₃, wherein the etchant etches up to and generally not into the nitride, polysilicon, and TiN materials,

wherein the etchant has a pH below about 2.0 and comprises (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250;

1, and (b) an etch rate through PSG of greater than 9,000 Å

/minute.

16. The method of claim 15 wherein removing all or substantially all of the doped oxide layer on the substrate comprises removing the doped oxide layer with an etchant having a ratio of DI to HF to HNO₃ of 10:

1;

1.0-2.0.

17. The method of claim 15 wherein removing all or substantially all of the doped oxide layer on the substrate comprises removing the doped oxide layer with an etchant having a selectivity of PSG to nitride of greater than 300:

1.

18. The method of claim 15 wherein removing all or substantially all of the doped oxide layer on the substrate comprises removing the doped oxide layer with an etchant having a selectivity of PSG to nitride of greater than 400:

1.

19. The method of claim 15 wherein removing all or substantially all of the doped oxide layer on the substrate comprises removing the doped oxide layer with an etchant having an attack rate of less than about 5 Å

/minute for the polysilicon and/or TiN materials.