Polychromatic light emitting diode device having wavelength conversion layer made of semiconductor and method for manufacturing the same

• US 8,217,400 B2
• Filed: 10/12/2009
• Issued: 07/10/2012
• Est. Priority Date: 10/13/2008
• Status: Active Grant

• Current Assignee: Advanced Optoelectronic Technology, Inc.
• Original Assignee: Advanced Optoelectronic Technology, Inc.
• Inventors: Huang, Shih Cheng, Tu, Po Min, Yeh, Ying Chao, Lin, Wen Yu, Wu, Peng Yi, Chan, Shih Hsiung
• Primary Examiner(s): Nguyen, Ha Tran T
• Assistant Examiner(s): Tran, Thanh Y
• Application Number:
  US12/577,350
• Publication Number:
  US 20100090232A1
• Time in Patent Office: 1,002 Days
• Field of Search: 257/E33.061, 257/98, 257/89, 257/76, 257/40, 257/43, 257/103, 257/99, 438/29, 438/26, 438/458, 438/46, 438/47, 438/455
• US Class Current: 257/79
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence

Abstract

A wavelength conversion layer is formed on a surface of a light emitting device for transforming a portion of light emitted from the light emitting device into light of a different wavelength. The transformed light is mixed with the untransformed light, and thus the light emitting device can emit light having preferred CIE coordinates.

Claims

1. A polychromatic light emitting diode device, comprising:

a substrate;

a multiple semiconductor layer formed on said substrate, wherein said multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer disposed between said n-type semiconductor layer and said p-type semiconductor layer, and said active layer emits light of a first wavelength;

a first wavelength conversion layer formed on said multiple semiconductor layer, the first wavelength conversion layer having a plurality of indentations, wherein said first wavelength conversion layer is made of semiconductor and absorbs a portion of said light of a first wavelength emitted from said active layer and emits light of a second wavelength, wherein said second wavelength is longer than said first wavelength; and

a transparent conductive layer formed on said first wavelength conversion layer, wherein said transparent conductive layer is in direct contact with said multiple semiconductor layer via said plurality of indentations of the first wavelength conversion layer.

2. The polychromatic light emitting diode device of claim 1, wherein the material of said first wavelength conversion layer is a Group III-V semiconductor material or a Group II-VI semiconductor material, wherein said Group III-V semiconductor material is Group III nitride, Group III phosphide or Group III arsenide, and said Group II-VI semiconductor material is Group II oxide, Group II sulfide or Group II selenide.

3. The polychromatic light emitting diode device of claim 2, further comprising a second wavelength conversion layer formed on said first wavelength conversion layer, wherein said second wavelength conversion layer absorbs said light of a first wavelength and said light of a second wavelength from said first wavelength conversion layer and emits light of a third wavelength, and said third wavelength is longer than said second wavelength.

4. The polychromatic light emitting diode device of claim 3, wherein the material of said second wavelength conversion layer is Group III-nitride, Group III phosphide or Group III arsenide.

5. The polychromatic light emitting diode device of claim 2, wherein said substrate is of sapphire, silicon carbide, lithium aluminate, lithium gallate, silicon, gallium nitride, zinc oxide, aluminum zinc oxide, gallium arsenide, gallium phosphide, gallium antimonide, indium phosphide, indium arsenide, zinc selenide or metal.

6. The polychromatic light emitting diode device of claim 5, further comprising a buffer layer between said substrate and said multiple semiconductor layer.

7. The polychromatic light emitting diode device of claim 6, further comprising a p-type electron blocking layer disposed between said active layer and said p-type semiconductor layer.

8. The polychromatic light emitting diode device of claim 1, further comprising a second wavelength conversion layer formed on said first wavelength conversion layer and a third wavelength conversion layer disposed on said second wavelength conversion layer.

9. The polychromatic light emitting diode device of claim 8, wherein said active layer emits ultraviolet light;

and said first wavelength conversion layer, said second wavelength conversion layer, and said third wavelength conversion layer separately emit blue light, green light and red light.