Light emitting device and method of manufacturing the same

• US 8,217,407 B2
• Filed: 12/01/2010
• Issued: 07/10/2012
• Est. Priority Date: 10/18/2006
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Watanabe, Yoshiaki, Hino, Tomonori, Okano, Nobukata, Kuramochi, Hisayoshi, Kikuchi, Yuichiro, Ohashi, Tatsuo
• Primary Examiner(s): Stark, Jarrett
• Assistant Examiner(s): Tobergte, Nicholas
• Application Number:
  US12/957,908
• Publication Number:
  US 20110068363A1
• Time in Patent Office: 587 Days
• Field of Search: 438/29, 438/39, 438/46, 257/91, 257/631
• US Class Current: 257/91
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.

Claims

1. A light emitting device comprising:

(a) a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type different from said first conduction type which are sequentially formed over a substrate;

(b) a first electrode formed over an exposed part of said first compound semiconductor layer;

(c) a second electrode formed over said second compound semiconductor layer;

(d) a Spin On Glass (SOG) layer formed over the substrate; and

(e) a first insulating layer formed over the substrate,

wherein,

at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode are covered with the SOG layer, and

the first insulating layer has a first surface in contact with the SOG layer, the first surface and the SOG layer overlapping at least on a top surface of said second electrode.

2. The light emitting device as set forth in claim 1, wherein the first insulating layer is formed under said SOG layer.

3. The light emitting device as set forth in claim 1, wherein a second insulating layer is formed over said SOG layer.

4. The light emitting device as set forth in claim 1, wherein the first insulating layer is formed under said SOG layer, and a second insulating layer is formed over said SOG layer.