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Semi-polar semiconductor light emission devices

  • US 8,217,418 B1
  • Filed: 02/14/2011
  • Issued: 07/10/2012
  • Est. Priority Date: 02/14/2011
  • Status: Active Grant
First Claim
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1. A light emitting device, comprising:

  • a silicon substrate having a (111) surface;

    a GaN crystal structure over the (111) surface of the silicon substrate, the GaN crystal structure having a semi-polar plane, a polar plane and an m-axis, and a first surface along the semi-polar plane and a second surface along the polar plane, wherein the first surface forms an angle between about 52 degrees and about 72 degrees relative to the m-axis; and

    light emission layers over the first surface, the light emission layers having at least one quantum well comprising GaN.

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