Micro electro-mechanical system packaging and interconnect

• US 8,217,473 B2
• Filed: 07/29/2005
• Issued: 07/10/2012
• Est. Priority Date: 07/29/2005
• Status: Expired due to Fees

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Chen, Chien-Hua, Bamber, John, Kang, Henry
• Primary Examiner(s): SEFER, AHMED N
• Application Number:
  US11/192,945
• Publication Number:
  US 20070128828A1
• Time in Patent Office: 2,538 Days
• Field of Search: 438/780, 438/106, 438/48, 438/458, 257/730, 257/704, 257/414, 298/54, 428/137
• US Class Current: 257/414
• CPC Class Codes: B81C 3/002 Aligning microparts

Abstract

A micro electro-mechanical system (MEMS) device includes an electrical wafer, a mechanical wafer, a plasma treated oxide seal bonding the electrical wafer to the mechanical wafer, and an electrical interconnect between the electrical wafer and the mechanical wafer.

Claims

1. A micro electro-mechanical system (MEMS) device comprising:

a first wafer comprising an oxide surface;

a second wafer comprising a plasma treated oxide seal ring; and

an electrical interconnect between the first wafer and the second wafer,

wherein the plasma treated oxide seal ring is directly bonded to the oxide surface of the first wafer,

wherein the first wafer comprises an electrical wafer, and

wherein the second wafer comprises a mechanical wafer including a micro mechanical device.

2. The MEMS device of claim 1, wherein the electrical interconnect comprises solder.

3. The MEMS device of claim 1, wherein the first wafer comprises a complementary metal-oxide-semiconductor (CMOS) circuit.

4. The MEMS device of claim 1, wherein the second wafer comprises a micromover.

5. The MEMS device of claim 1, wherein the plasma treated oxide seal ring comprises plasma treated SiO₂.

6. The MEMS device of claim 1, wherein the plasma treated oxide seal ring provides a hermetic seal.

7. The MEMS device of claim 1, wherein the plasma treated oxide seal ring directly bonds only surfaces parallel to the first wafer and the second wafer.

8. A micro electro-mechanical system (MEMS) device comprising:

a first chip in a first package comprising an oxide surface, the first package contacting a first surface of the first chip, a second surface of the first chip opposite the first surface of the first chip, and a third surface of the first chip extending between the first and second surfaces of the first chip;

a second chip in a second package comprising a plasma treated oxide seal ring, the second package contacting a first surface of the second chip, a second surface of the second chip opposite the first surface of the second chip, and a third surface of the second chip extending between the first and second surfaces of the second chip; and

an electrical interconnect between the first chip and the second chip,

wherein the plasma treated oxide seal ring is directly bonded to the oxide surface of the first package.

9. The MEMS device of claim 8, wherein the electrical interconnect bonds a face of the first chip to a face of the second chip.

10. The MEMS device of claim 8, wherein the electrical interconnect bonds a face of the first chip to a back of the second chip.

11. The MEMS device of claim 8, wherein the electrical interconnect comprises solder.

12. The MEMS device of claim 8, wherein the plasma treated oxide seal ring comprises plasma treated SiO₂.

13. The MEMS device of claim 8, wherein the plasma treated oxide seal ring provides a hermetic seal.

14. The MEMS device system of claim 8, wherein the plasma treated oxide seal ring directly bonds only surfaces parallel to the first chip and the second chip.

15. A micro electro-mechanical system (MEMS) device comprising:

an electrical die comprising an oxide surface;

a mechanical die comprising a surface and a micro mechanical device;

a plasma treated oxide seal ring directly contacting the oxide surface of the electrical die and the surface of the mechanical die to bond the electrical die to the mechanical die; and

an electrical interconnect between the electrical die and the mechanical die,

wherein the surface of the mechanical die is suitable for immediate bonding on contact with the plasma treated oxide seal ring.

16. The MEMS device system of claim 15, wherein the electrical interconnect comprises solder.

17. The MEMS device of claim 15, wherein the electrical die comprises a complementary metal-oxide-semiconductor (CMOS) circuit.

18. The MEMS device of claim 15, wherein the mechanical die comprises a micromover.

19. The MEMS device of claim 15, wherein the plasma treated oxide seal ring comprises plasma treated SiO₂.

20. The MEMS device of claim 15, wherein the plasma treated oxide seal ring provides a hermetic seal.

21. A micro electro-mechanical system (MEMS) device comprising:

a first wafer comprising a first oxide seal ring;

a second wafer comprising a plasma treated oxide seal ring; and

an electrical interconnect between the first wafer and the second wafer,

wherein the plasma treated oxide seal ring is directly bonded to the first oxide seal ring,

wherein the first wafer comprises an electrical wafer, and

wherein the second wafer comprises a mechanical wafer including a micro mechanical device.

22. The MEMS device of claim 21, wherein the electrical interconnect comprises solder.

23. The MEMS device of claim 21, wherein the first wafer comprises a complementary metal-oxide-semiconductor (CMOS) circuit, and

wherein the second wafer comprises a micromover.

24. The MEMS device of claim 21, wherein the plasma treated oxide seal ring comprises plasma treated SiO₂.

25. The MEMS device of claim 21, wherein the plasma treated oxide seal ring provides a hermetic seal.

26. The MEMS device of claim 21, wherein the plasma treated oxide seal ring directly bonds only surfaces parallel to the first wafer and the second wafer.